BCP882 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The BCP882 is suited for the output stage of 1.5W audio, voltage regulator, and relay driver. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B C D E F REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. o Absolute Maximum Ratings at TA=25 C Symbol Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 30 Collector Current 3 V V A IC PD TJ,Tstg Parameter 5 Total Power Dissipation W 1.2 Junction and Storage Temperature C -55~+150 O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Symbol BVCBO BV CEO BVEBO Min Typ. - Max - - 1 uA VCB= 30V 1 0.5 uA VEB=3V I C=2A,IB=0.2A 2 500 - V I CBO 40 30 5 - I EBO VCE(sat) - - VBE (sat) hFE1 - - 30 100 - - Gain-Bandwidth Product hFE2 fT Output Capacitance Cob - 90 45 - Unit V V V Test Conditions I C=100 µA,IE=0 I C= 1mA,IB=0 I E= 10µA V I C=2A,IB=0.2A VCE= 2 V, I C=20mA VCE= 2 V, I C=1 A VCE= 5 V, IC= 0.1A,f=100MHz VCB=10V , f=1MHz,IE=0 MH z pF Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q 100~200 P E 160~320 250~500 Any changing of specification will not be informed individual Page 1 of 2 BCP882 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2