SECOS BCP882

BCP882
NPN Silicon
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
Description
The BCP882 is suited for the output stage of 1.5W
audio, voltage regulator, and relay driver.
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
A
B
C
D
E
F
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
o
Absolute Maximum Ratings at TA=25 C
Symbol
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
30
Collector Current
3
V
V
A
IC
PD
TJ,Tstg
Parameter
5
Total Power Dissipation
W
1.2
Junction and Storage Temperature
C
-55~+150
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Symbol
BVCBO
BV CEO
BVEBO
Min
Typ.
-
Max
-
-
1
uA
VCB= 30V
1
0.5
uA
VEB=3V
I C=2A,IB=0.2A
2
500
-
V
I CBO
40
30
5
-
I EBO
VCE(sat)
-
-
VBE (sat)
hFE1
-
-
30
100
-
-
Gain-Bandwidth Product
hFE2
fT
Output Capacitance
Cob
-
90
45
-
Unit
V
V
V
Test Conditions
I C=100 µA,IE=0
I C= 1mA,IB=0
I E= 10µA
V
I C=2A,IB=0.2A
VCE= 2 V, I C=20mA
VCE= 2 V, I C=1 A
VCE= 5 V, IC= 0.1A,f=100MHz
VCB=10V , f=1MHz,IE=0
MH z
pF
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q
100~200
P
E
160~320
250~500
Any changing of specification will not be informed individual
Page 1 of 2
BCP882
Elektronische Bauelemente
NPN Silicon
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2