PZT965 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT965 is designed for use as AF output amplifier and flash unit. REF. A C D E I H 9 6 5 Date Code B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C ABSOLUTE MAXIMUM RATINGS Symbol Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 20 V V Collector Current (Continous) Collector Current (Peak PT=10mS) 5 8 Total Power Dissipation 2 IC PD TJ,Tstg Parameter 7 Junction and Storage Temperature -55~+150 A W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Cutoff Current Symbol BVCBO *BVCEO BVEBO I CBO Emitter-Base Cutoff Current I EBO 7 - Collector Saturation Voltage *VCE(sat) - *hFE1 *hFE2 230 150 fT Cob - Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Min 40 20 Typ. - Max - Unit V V V 0.1 0.1 uA uA 0.35 - 1 V 800 - 150 - 50 MH z pF Test Conditions I C= 100µA I C= 1mA I E= 10µA VCB= 60V VEB=7V I C=3A,IB=0.1 A VCE= 2 V, I C=0.5 A VCE= 2 V, I C=2 A VCE= 6 V, IE = 50mA VCB= 20 V , f=1MHz *Pulse width≦300µs, Duty Cycle≦2% Classification of hFE Rank Range http://www.SeCoSGmbH.com 21-Oct-2009 Rev. B R 340~600 Any changing of specification will not be informed individual Page 1 of 2 PZT965 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 21-Oct-2009 Rev. B Any changing of specification will not be informed individual Page 2of 2