SECOS PZT965

PZT965
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT965 is designed for use as
AF output amplifier and flash unit.
REF.
A
C
D
E
I
H
9 6 5
Date Code
B
C
E
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
o
Ta=25 C
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
V
Collector Current (Continous)
Collector Current (Peak PT=10mS)
5
8
Total Power Dissipation
2
IC
PD
TJ,Tstg
Parameter
7
Junction and Storage Temperature
-55~+150
A
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
I CBO
Emitter-Base Cutoff Current
I EBO
7
-
Collector Saturation Voltage
*VCE(sat)
-
*hFE1
*hFE2
230
150
fT
Cob
-
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Min
40
20
Typ.
-
Max
-
Unit
V
V
V
0.1
0.1
uA
uA
0.35
-
1
V
800
-
150
-
50
MH z
pF
Test Conditions
I C= 100µA
I C= 1mA
I E= 10µA
VCB= 60V
VEB=7V
I C=3A,IB=0.1 A
VCE= 2 V, I C=0.5 A
VCE= 2 V, I C=2 A
VCE= 6 V, IE = 50mA
VCB= 20 V , f=1MHz
*Pulse width≦300µs, Duty Cycle≦2%
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com
21-Oct-2009 Rev. B
R
340~600
Any changing of specification will not be informed individual
Page 1 of 2
PZT965
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
21-Oct-2009 Rev. B
Any changing of specification will not be informed individual
Page 2of 2