BCPA14 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The BCPA14 is a Darlington amplifier transistor designed for applications requiring exremely high current gain. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B C D E F REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. o Absolute Maximum Ratings at TA=25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VE BO 10 V Collect Current IC 500 mA Total Power Dissipation PD 1.0 Operating Junction and Storage Temperature Range W o C -55~+150 Tj, Tstg ELECTRICAL CHARACTERISTICS (Tamb=25 o C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain DC Current Gain Transition Frequency Symbol Min. Cob *VCE(sat) *VBE(on) *hFE1 *hFE2 fT 10K 20K 125 BVCBO BV CEO BVEBO ICBO ICEO 30 30 10 - Typ. Max. - - 100 100 6 1.5 2.0 - Unit V V V nA nA pF V V MHz Test Conditions IC=100u A, IE=0 IC= 100uA, I B =0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=10V, IC=0 VCB=10V,f=1MHz,IE=0 IC=100mA, IB =0.1mA VCE=5V, IC=100mA VCE=5V, I C=10mA VCE=5V, I C=100mA VCE=5V, I C =10mA, f=100MHz *Pulse Test: Pulse Width≦380us, Duty Cycle≦2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BCPA14 NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2