SECOS BCP69

BCP69
PNP Transistor
Elektronische Bauelemente
Silicon Epitaxial Transistor
RoHS Compliant Product
SOT-223
Description
The BCP69 is designed for guse in
low voltage and medium power
applications.
Features
* VCEO : -20V
* IC : 1A
REF.
Date Code
A
C
D
E
I
H
BCP69
B
C
E
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
o
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol
Value
Units
VCBO
Collector-Base Voltage
- 25
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
- 20
V
V
IC
PD
TJ,Tstg
Parameter
-5
Collector Current
-1
Total Power Dissipation
1.5
Junction and Storage Temperature
-65~-150
A
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
I CBO
I EBO
*VCE(sat)1
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min
- 25
- 20
-5
50
85
60
-
Typ.
-
Max
- 10
Uni
V
V
V
uA
60
- 10
- 500
- 1.0
375
-
uA
mV
Test Conditions
I C=-100µA, I E=0
I C=-1mA, I B=0
I E=-10µA, IC=0
VCB=- 25V, I E=0
VEB=-5V, IC=0
I C=-1mA, I B=-100mA
V
VCE=-1V, I C=-1A
VCE =-10V, I C=-5mA
VCE=-1V, I C=-500mA
VCE=-1V, I C=-1A
MH z VCE=- 5V, IC=-10 mA
*Pulse Test: Pulse Width
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
380 s, Duty Cycle
2%
Any changing of specification will not be informed individual
Page 1 of 2
BCP69
Elektronische Bauelemente
PNP Transistor
Silicon Epitaxial Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2