SECOS SMG2314

SMG2314
3.5A, 20V,RDS(ON)75mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2314 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extemely
efficient and cost-effectiveness device. The SMG2314
is universally used for all commercial-industrial
applications.
A
SC-59
L
S
2
3
Top View
B
1
Features
D
* Low On-Resistance
* Capable Of 2.5V Gate Drive
G
J
C
K
H
Drain
Marking : 2314
Gate
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
Source
D
Dim
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, [email protected]
Ratings
Unit
VDS
20
V
VGS
±12
V
o
3.5
A
o
ID@TA=70 C
2.8
A
IDM
10
A
1.38
W
0.01
W / oC
-55~+150
o
ID@TA=25 C
3
Continuous Drain Current, [email protected]
1,2
Pulsed Drain Current
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2314
3.5A, 20V,RDS(ON)75mΩ
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
N-Channel Enhancement Mode Power Mos.FET
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
20
_
_
V
BVDS/ Tj
_
0.02
_
VGS(th)
0.5
_
1.2
IGSS
_
_
_
_
_
_
_
_
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance
Total Gate Charge 2
IDSS
RDS(ON)
Qg
_
6
8
Tf
_
3
Crss
Forward Transconductance
Gfs
Gate Resistance
Rg
VDS=16V,VGS=0
75
_
ID=3A
VDS=16V
VGS=4.5V
VDD=15V
_
ID=1A
nS
55
_
_
40
_
RD=15Ω
pF
_
VGS=5V
RG=3.3 Ω
_
_
_
nC
_
370
7
VGS=2.5V, ID=1.2A
_
230
_
VGS=4.5V, ID=3.5A
mΩ
_
10
Reverse Transfer Capacitance
uA
2
_
Coss
10
_
Td(Off)
Output Capacitance
VDS=20V,VGS=0
0.7
_
Ciss
uA
7
Td(ON)
Input Capacitance
1
_
Turn-on Delay Time 2
Fall Time
VGS=±12V
4
_
Turn-off Delay Time
nA
_
Qgd
Tr
±100
125
Gate-Drain ("Miller") Charge
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
_
Qgs
VGS=0V, ID=250uA
V
_
Gate-Source Charge
Rise Time
o
V/ C
Test Condition
VGS=0V
VDS=20V
f=1.0MHz
S
1.1
1.7
Ω
VDS=5V, ID=3A
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Change
Symbol
Min.
Typ.
Max.
Unit
Test Condition
VDS
_
_
1.2
V
IS=1.2 A, VGS=0V.
Trr
_
16
_
nS
Qrr
_
8
_
nC
IS=3A,VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on FR4 board, t≦10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2314
Elektronische Bauelemente
3.5A, 20V,RDS(ON)75mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Char acteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Char acteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistan ce
v.s. Ju nction Temperat ure
Fig 6. Gate Threshold Voltage v.s.
Ju nction Temperat ure
Any changing of specification will not be informed individual
Page 3 of 4
SMG2314
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
3.5A, 20V,RDS(ON)75mΩ
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4