SGM2306A
5A, 30V,RDS(ON) 35mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-89
The SGM2306A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SGM2306A is universally used for all commercialindustrial surface mount applications.
Features
* Lower On-Resistance
* Capable Of 2.5V Gate drive
REF.
D
A
B
C
D
E
F
G
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
S
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Continuous Drain Current, VGS @4.5V
±12
V
ID@TA=25 C
5.0
A
o
ID@TA=70 C
4.0
A
20
A
1.5
W
0.012
W / oC
o
3
Continuous Drain Current, VGS @4.5V
Pulsed Drain Current
V
VGS
3
1,2
IDM
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
30
VDS
Gate-Source Voltage
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
83.3
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SGM2306A
5A, 30V,RDS(ON) 35mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
30
_
_
V
BVDS/ Tj
_
0.1
_
V/ C
VGS(th)
0.5
_
1.2
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=30V,VGS=0
_
_
25
uA
VDS=24V,VGS=0
_
_
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
VGS=4.5V, ID=5 A
VGS=1.8V, ID=1 A
8.5
15
Qgd
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Coss
mΩ
90
Gate-Drain ("Miller") Charge
Output Capacitance
VGS=10V, ID=5A
_
_
Ciss
VDS=VGS, ID=250uA
_
Qgs
Input Capacitance
35
o
Reference to 25 C, ID=1mA
VGS=2.5V, ID=2.6A
Gate-Source Charge
Fall Time
30
VGS=0V, ID=250uA
50
_
Turn-off Delay Time
o
Test Condition
_
Qg
Rise Time
Unit
_
Total Gate Charge2
Turn-on Delay Time2
Max.
_
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
1.5
_
3.2
_
6
_
20
_
20
_
3
_
660
90
70
13
nC
ID=5A
VDS=16V
VGS= 4.5V
VDD=15V
ID=5A
nS
VGS=10V
RG=3.3Ω
RD=3 Ω
1050
_
pF
VGS=0V
VDS=25V
S
VDS=5V, ID=5A
f=1.0MHz
_
_
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time2
Trr
_
14
_
7
_
Reverse Recovery Change
Q rr
_
1.2
Unit
Test Condition
V
IS=1.2A, VGS=0V.
nS
IS=5A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on FR4 board, t ≦10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SGM2306A
Elektronische Bauelemente
5A, 30V,RDS(ON) 35mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SGM2306A
Elektronische Bauelemente
5A, 30V,RDS(ON) 35mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4