SECOS SMG2359P

SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381 
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process
To provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
L
3
3
C B
Top View
1
FEATURES
1
K
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.




2
E
D
F
G
REF.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
-60
RDS(on) (
[email protected]= -10V
[email protected]= -4.5V
ID(A)
-1.6
-1.3
2

A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
Drain

Gate

Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C
TA=70°C
B
Pulsed Drain Current
Continuous Source Current (Diode Conduction) A
SYMBOL
RATING
UNIT
VDS
VGS
-60
±20
1.7
1.4
±15
-1.7
1.3
0.8
-55 ~ 150
V
V
ID
IDM
IS
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
THERMAL RESISTANCE DATA
t≦5 sec
Maximum Junction to Ambient A
RθJA
Steady-State
Power Dissipation A
100
166
A
A
A
W
°C
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381 
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBO MIN TYP MAX UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
-1
-2.1
-3.5
V
VDS = VGS, ID = -250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= ±20V
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-10
On-State Drain Current A
ID(ON)
-8
-
-
A
VDS = -5V, VGS= -10V
Drain-Source Breakdown Voltage
VBR(DSS)
-60
-
-
V
VGS = 0, ID = -1mA
Drain-Source On-Resistance A
RDS(ON)
-
300
381
-
450
561
μA
mΩ
VDS = -48V, VGS= 0V
VDS = -48V, VGS= 0V, TJ=55°C
VGS= -10V, ID = -1.6A
VGS= -4.5V, ID = -1.3A
Forward Transconductance A
gFS
-
8
-
S
VDS= -15V,,ID = -1.6A
Diode Forward Voltage
VSD
-
-
-1.2
V
IS= -2.5A, VGS=0V
Dynamic b
Total Gate Charge
Qg
-
18
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Charge
Qgd
-
2
-
VGS= -4.5V
Turn-On Delay Time
Td(ON)
-
8
-
ID= -1A, VDD= -30V
Tr
-
10
-
Td(OFF)
-
35
-
Tf
-
12
-
Rise Time
Turn-Off Delay Time
Fall Time
ID= -1.6A
nC
nS
VDS= -30V
VGEN= -10V
RG= 6Ω
RL= 30Ω
Notes
a.
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2359P
Elektronische Bauelemente
-1.6 A, -60 V, RDS(ON) 0.381 
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2359P
Elektronische Bauelemente
-1.6 A, -60 V, RDS(ON) 0.381 
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4