SMG2359P -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 FEATURES 1 K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 2 E D F G REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -60 RDS(on) ( 0.381@VGS= -10V 0.561@VGS= -4.5V ID(A) -1.6 -1.3 2 A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 Drain Gate Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C B Pulsed Drain Current Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS -60 ±20 1.7 1.4 ±15 -1.7 1.3 0.8 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦5 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 100 166 A A A W °C °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 22-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2359P -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -1 -2.1 -3.5 V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current A ID(ON) -8 - - A VDS = -5V, VGS= -10V Drain-Source Breakdown Voltage VBR(DSS) -60 - - V VGS = 0, ID = -1mA Drain-Source On-Resistance A RDS(ON) - 300 381 - 450 561 μA mΩ VDS = -48V, VGS= 0V VDS = -48V, VGS= 0V, TJ=55°C VGS= -10V, ID = -1.6A VGS= -4.5V, ID = -1.3A Forward Transconductance A gFS - 8 - S VDS= -15V,,ID = -1.6A Diode Forward Voltage VSD - - -1.2 V IS= -2.5A, VGS=0V Dynamic b Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 2 - VGS= -4.5V Turn-On Delay Time Td(ON) - 8 - ID= -1A, VDD= -30V Tr - 10 - Td(OFF) - 35 - Tf - 12 - Rise Time Turn-Off Delay Time Fall Time ID= -1.6A nC nS VDS= -30V VGEN= -10V RG= 6Ω RL= 30Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 22-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 22-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 22-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4