SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K 2 E 2 FEATURES D Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. F PRODUCT SUMMARY SMG2398N VDS(V) RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V 60 H G REF. A B C D E F ID(A) 2.2 1.8 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 V V A A A A W W °C Symbol Maximum Unit RJA 100 166 °C / W ID PD Tj, Tstg Operating Junction and Storage Temperature Range Unit 60 ±20 2.2 1.7 ±15 1.7 1.3 0.8 -55 ~ 150 IDM IS PD @ TA=25°C PD @ TA=70°C Power Dissipation 1 Ratings Maximum THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 t ≦ 5 sec Steady State Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1.0 - - V VDS=VGS, ID= 250uA IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - 1 - - 50 10 - - - - 194 IDSS ID(on) VDS= 48V, VGS= 0V uA RDS(ON) VDS= 48V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 2.2A mΩ - - 273 VGS= 4.5V, ID= 1.8A Forward Transconductance 1 gfs - 8 - S VDS= 4.5V, ID= 2.2A Diode Forward Voltage VSD - - 1.2 V IS= 1.7A, VGS= 0V DYNAMIC 2 Total Gate Charge Qg - 4.0 - Gate-Source Charge Qgs - 4.0 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay Time Td(on) - 10 - Tr - 10 - Td(off) - 20 - Tf - 10 - TRR - 50 - Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time nC VDS= 30V, VGS= 5V, ID= 2.2A VDD= 30V, VGEN= 10V, RL= 30, ID= 1A nS IF=1.7A, di/dt=100 A / uS Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 25-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2