SID9575 -15A , -60V , RDS(ON) 90 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Characteristic A B C D GE APPLICATION The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC / DC converters. K H F 2 Drain MARKING: 9575 1 REF. Gate Date code M 3 Source A B C D E F J Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 P REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±25 V -15 A -9.5 A IDM -45 A Parameter Continuous Drain Current VGS=10V, TC=25°C VGS=10V, TC=100°C Pulsed Drain Current 1 Total Power Dissipation @ TC = 25°C ID PD 36 W Thermal Resistance Junction-case RθJC 3.5 °C / W Thermal Resistance Junction-ambient RθJA 110 °C / W 0.29 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage temperature http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 4 SID9575 -15A , -60V , RDS(ON) 90 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit BVDSS -60 - - V ∆BVDSS / ∆TJ - -0.06 - V / °C VGS(th) -1 - -3 V VDS=VGS, ID= -250 µA Forward Trans-conductance gfs - 14 - S VDS = -10V, ID = -9A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±25V - - -1 - - -25 - - 90 - - 120 Drain-Source Breakdown Voltage Breakdown Coefficient Voltage Temperature Gate Threshold Voltage Drain-Source Current Leakage TJ=25℃ TJ=150℃ 2 Static Drain-Source On-Resistance IDSS RDS(ON) 2 Total Gate Charge Qg - 17 27 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Charge Qgd - 6 - Td(on) - 10 - Tr - 19 - Td(off) - 46 - Tf - 53 - Input Capacitance Ciss - 1660 2660 Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 100 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time uA mΩ Test Conditions VGS=0, ID = -250µA Reference to 25°C, I D = -1mA VDS= -60 V, VGS=0 VDS= -48 V, VGS=0 VGS= -10 V, ID= -12A VGS= -4.5 V, ID= -9 A nC ID= -9 A VDS= -48 V VGS= -4.5 V nS VDS= -30 V ID= -9 A VGS= -10 V RG=3.3 Ω RD=3.3 Ω pF VGS=0 VDS= -25V f =1 MHz Source-Drain Diode Forward On Voltage 2 Reverse Recovery Time VSD - - -1.2 V IS= -9A, VGS=0 Trr - 56 - nS Qrr - 159 - nC IS= -9 A, VGS=0 dl/dt=100A / µs 2 Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2% . http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SID9575 Elektronische Bauelemente -15A , -60V , RDS(ON) 90 mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-May-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4