SGM2305A -3.2 A, -30 V, RDS(ON) 80 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 A The SGM2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requirement Surface Mount Device PACKAGE INFORMATION Top View K 2 4 2 3 D G 1 REF. G A B C D E F S 4 1 L F 3 Weight: 0.0508 g (approximately) E D CB Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 H J REF. G H J K L Millimeter Min. Max. 0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. MARKING 2305A = Date code ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage temperature Symbol Ratings Unit VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @ TA = 25°C TJ, TSTG -30 ±12 -3.2 -2.6 -10 1.5 0.012 -55~150 V V A A A W W / °C °C Symbol Value Unit RθJA 83.3 °C / W THERMAL DATA Parameter 3 Thermal Resistance Junction-Ambient http://www.SeCoSGmbH.com/ 01-June-2008 Rev. A Max. Any changes of specification will not be informed individually. Page 1 of 4 SGM2305A -3.2 A, -30 V, RDS(ON) 80 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ BVDSS -30 - - ΔBVDSS / ΔTJ - -0.1 - VGS(th) -0.5 - -1.2 V VDS=VGS, ID= -250 uA Forward Trans-conductance gfs - 9 - S VDS = -5V, ID = -3A Gate-Source Leakage Current IGSS - - ±100 nA VGS = ±12V - - -1 - - -25 - - 65 - - 80 Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current (TJ=25℃) IDSS Drain-Source Leakage Current (TJ=70℃) Static Drain-Source On-Resistance RDS(ON) Max Unit - - 150 - - 250 Qg - 10 18 Gate-Source Charge Qgs - 1.8 - Gate-Drain (“Miller”) Charge Qgd - 3.6 - Td(on) - 7 - Tr - 15 - Td(off) - 21 - Tf - 15 - Input Capacitance Ciss - 735 1325 Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 80 - Symbol Min Typ VSD - - -1.2 Trr - 24 Qrr - 19 Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time V Test Conditions VGS = 0, ID = -250 uA V / °C Reference to 25°C, ID = -1 mA uA VDS = -30 V, VGS = 0 VDS = -24 V, VGS = 0 VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-3.0A mΩ VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A nC ID = -3.2 A VDS = -24 V VGS = -4.5 V nS VDS = -15 V ID = -3.2 A VGS = -10 V RG = 3.3 Ω RD = 4.6 Ω pF VGS = 0 V VDS = -25 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter 2 Forward On Voltage Reverse Recovery Time 2 Reverse Recovery Charge Notes: Max Unit Test Conditions V IS=-1.2A, VGS=0V - ns IS=-3.2A, VGS=0V - nC dl/dt = 100 A / uS 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on FR4 board, t ≦10sec. http://www.SeCoSGmbH.com/ 01-June-2008 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SGM2305A Elektronische Bauelemente -3.2 A, -30 V, RDS(ON) 80 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-June-2008 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SGM2305A Elektronische Bauelemente -3.2 A, -30 V, RDS(ON) 80 mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (cont’d) F=1.0MHz http://www.SeCoSGmbH.com/ 01-June-2008 Rev. A Any changes of specification will not be informed individually. Page 4 of 4