SSF1321P -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOT-323 A L 3 3 C B Top View FEATURES 1 1 K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOT-323 saves board space. Fast switching speed. High performance trench technology. VDS(V) -20 PRODUCT SUMMARY RDS(on) ( 0.079@VGS= -4.5V 0.110@VGS= -2.5V 2 E 2 D F H G J Drain REF. ID(A) -1.7 -1.5 Gate A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Source MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a SYMBOL RATING UNIT VDS VGS ID @ TA=25°C ID @ TA=70°C IDM IS PD@ TA=25°C PD@ TA=70°C -20 ±8 -1.7 -1.4 -2.5 ±0.28 0.34 0.22 V V TJ, TSTG -55~150 Operating Junction & Storage Temperature Range Maximum Thermal Resistance a Junction-Ambient THERMAL RESISTANCE RATINGS 375 t ≦ 5 sec RθJA Steady-State 430 A A A W °C °C / W Note: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. 17-Jun-2010 Rev. A Page 1 of 4 SSF1321P -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Gate-Threshold Voltage VGS(th) -0.4 - - V VDS= VGS, ID = -250μA Gate-Source Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±8V - - -1 Zero Gate Voltage Drain Current IDSS VDS= -16V, VGS= 0V μA On-State Drain Current a ID(on) Drain-Source On-Resistance a RDS(ON) - - -10 -5 - - - - 79 VDS= -16V, VGS= 0V, TJ= 55°C A VDS= -5V, VGS= -4.5V VGS= -4.5V, ID= -1.7A mΩ - - 110 VGS= -2.5V, ID= -1.5A Forward Transconductance a gFS - 9 - S VDS= -5V, ID= -1.25A Diode Forward Voltage VSD - -0.65 - V IS= -0.46A, VGS= 0V DYNAMIC CHARACTERISTICS b Total Gate Charge Qg - 7.2 - Gate-Source Charge Qgs - 1.7 - Gate-Drain Charge Qgd - 1.5 - ID= -1.7A Turn-on Delay Time Td(ON) - 10 - VDD= -10V Rise Time TR - 9 - VDS= -10V nC VGS= -4.5V IL= -1A nS Turn-off Delay Time Td(OFF) - 27 - VGEN= -4.5V Fall Time TF - 11 - RG= 6Ω Notes： a. Pulse test：PW ≦ 300us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. c. Repetitive rating, pulse width limited by junction temperature. 17-Jun-2010 Rev. A Page 2 of 4 SSF1321P Elektronische Bauelemente -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET CHARACTERISTIC CURVES 17-Jun-2010 Rev. A Page 3 of 4 SSF1321P Elektronische Bauelemente -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET CHARACTERISTIC CURVES 17-Jun-2010 Rev. A Page 4 of 4