SST2605

SST2605
-4.0A , -30V , RDS(ON) 80 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2605 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SOT-26
package is universally used for all commercial-industrial
applications.
SOT-26
A
E
L
B
FEATURES



Simple Drive Requirement
Smaller Outline Package
Surface mount package
F
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.30 MAX.
1.90 REF.
0.30
0.50
H
J
K
DG
MARKING
2605

C
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
Date Code
TOP VIEW
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-26
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
Continuous Drain Current 3
TA=70°C
Pulsed Drain Current 1
Power Dissipation
TA=25°C
ID
-3.3
A
IDM
-20
A
PD
2
W
0.016
W / °C
-55~150
°C
62.5
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
-4
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
09-Oct-2014 Rev. E
3
RJA
Any changes of specification will not be informed individually.
Page 1 of 4
SST2605
-4.0A , -30V , RDS(ON) 80 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
BVDS /△Tj
-
-0.02
-
V/°C
VGS(th)
-1
-
-3
V
VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
-1
-
-
-25
Drain-Source On-Resistance 2
RDS(ON)
-
-
80
-
-
120
-
6
-
Gate-Threshold Voltage
Forward Transconductance
gfs
VGS=0, ID= -250uA
uA
mΩ
S
Reference to 25°C, ID= -1mA
VDS= -24V, VGS=0, TJ=25°C
VDS= -24V, VGS=0, TJ=55°C
VGS= -10V, ID= -4A
VGS= -4.5V, ID= -3A
VDS= -5V, ID= -4A
Dynamic
2
Total Gate Charge
Qg
-
5.5
8.8
Gate-Source Charge
Qgs
-
1
-
Gate-Drain Charge
Qgd
-
2.6
-
Td(on)
-
7
-
Tr
-
6
-
Td(off)
-
18
-
Tf
-
4
-
Input Capacitance
Ciss
-
400
640
Output Capacitance
Coss
-
90
-
Reverse Transfer Capacitance
Crss
-
30
-
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= -24V,
VGS= -4.5V,
ID= -4A
nS
VDD= -15V,
VGS= -10V,
RG=3.3Ω,
RD=15Ω,
ID= -1A
pF
VGS=0V
VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1.2
V
IS= -1.6A, VGS=0V
Reverse Recovery Time
TRR
-
21
-
ns
IS= -4A, VGS=0
Reverse Recovery Charge
QRR
-
14
-
nC
dI/dt=100A/us
2
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, dutycycle ≦2%
2
3. Surface mounted on 1 in copper pad of FR4 board, 156°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
09-Oct-2014 Rev. E
Any changes of specification will not be informed individually.
Page 2 of 4
SST2605
Elektronische Bauelemente
-4.0A , -30V , RDS(ON) 80 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Oct-2014 Rev. E
Any changes of specification will not be informed individually.
Page 3 of 4
SST2605
Elektronische Bauelemente
-4.0A , -30V , RDS(ON) 80 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Oct-2014 Rev. E
Any changes of specification will not be informed individually.
Page 4 of 4