SECOS SSM452

SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM452 provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
FEATURES



SOT-223
Simple Drive Requirement
Lower On-resistance
Fast Switching
A
M
4
Top View
CB
1
2
K
MARKING
E
L
3
D

F
G
H
J
Drain

REF.
Gate
A
B
C
D
E
F

Source
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 3
1
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
Range
Maximum Junction–Ambient 3
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
REF.
G
H
J
K
L
M
RATING
UNIT
-30
±20
-6.0
-4.8
-20
2.7
0.02
V
V
A
A
A
W
W / °C
-55 ~ 150
°C
45
°C / W
VDS
VGS
TA = 25°C
TA = 70°C
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
ID
IDM
PD
TJ, TSTG
Millimeter
Min.
Max.
0.10
0.25
0.35
2.30 REF.
2.90
3.10
THERMAL DATA
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
△BVDSS / △TJ
-
-0.02
-
V / °C
VGS(TH)
-1.0
-
-3.0
V
VDS= VGS, ID = -250uA
Forward Transconductance
gFS
-
10
-
S
VDS= -10V, ID= -5.3A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-1
Breakdown Voltage
Temperature Coefficient
Gate Threshold Voltage
Drain-Source Leakage Current
(TJ= 25°C)
Drain-Source Leakage Current
TEST CONDITION
VGS= 0V, ID = -250uA
Reference to 25°C,
ID= -1mA
VDS= -30V, VGS=0V
μA
IDSS
-
-
-25
-
45
55
-
75
100
Qg
-
9.2
16
Gate-Source Charge
Qgs
-
2.8
-
Gate-Drain (“Miller”) Charge
Qgd
-
5.2
-
ID= -5.3A
Td(ON)
-
11
-
VDS= -15V
Tr
-
8
-
Td(OFF)
-
25
-
Tf
-
17
-
Input Capacitance
CISS
-
507
912
Output Capacitance
COSS
-
222
-
Reverse Transfer Capacitance
CRSS
-
158
-
(TJ= 70°C)
Drain-Source On Resistance
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
RDS(ON)
VDS= -24V, VGS=0V
mΩ
VGS= -10V, ID= -5.3A
VGS= -4.5V, ID= -4.2A
VGS= -4.5V
nC
nS
VDS= -24V
VGS= -10V
ID= -1A
RG= 6Ω, RD= 15Ω
VDS= -15V
pF
VGS= 0V
f= 1MHz
SOURCE-DRAIN DIODE
Forward On Voltage 2
VSD
-
-
-1.2
V
VGS= 0V, IS= -2.3A
Reverse Recovery Time
Trr
-
29
-
nS
VGS= 0V, IS= -5.3A,
Reverse Recovery Charge
Qrr
-
20
-
nC
dl/dt= 100A/μs
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%
2
3. Surface mounted on 1 in copper pad of FR4 board; 120°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SSM452
Elektronische Bauelemente
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SSM452
Elektronische Bauelemente
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4