SSM452 -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistance Fast Switching A M 4 Top View CB 1 2 K MARKING E L 3 D F G H J Drain REF. Gate A B C D E F Source MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 3 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Maximum Junction–Ambient 3 http://www.SeCoSGmbH.com/ 24-Jun-2010 Rev. A REF. G H J K L M RATING UNIT -30 ±20 -6.0 -4.8 -20 2.7 0.02 V V A A A W W / °C -55 ~ 150 °C 45 °C / W VDS VGS TA = 25°C TA = 70°C Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 ID IDM PD TJ, TSTG Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 THERMAL DATA RθJA Any changes of specification will not be informed individually. Page 1 of 4 SSM452 -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Drain-Source Breakdown Voltage BVDSS -30 - - V △BVDSS / △TJ - -0.02 - V / °C VGS(TH) -1.0 - -3.0 V VDS= VGS, ID = -250uA Forward Transconductance gFS - 10 - S VDS= -10V, ID= -5.3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V - - -1 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current (TJ= 25°C) Drain-Source Leakage Current TEST CONDITION VGS= 0V, ID = -250uA Reference to 25°C, ID= -1mA VDS= -30V, VGS=0V μA IDSS - - -25 - 45 55 - 75 100 Qg - 9.2 16 Gate-Source Charge Qgs - 2.8 - Gate-Drain (“Miller”) Charge Qgd - 5.2 - ID= -5.3A Td(ON) - 11 - VDS= -15V Tr - 8 - Td(OFF) - 25 - Tf - 17 - Input Capacitance CISS - 507 912 Output Capacitance COSS - 222 - Reverse Transfer Capacitance CRSS - 158 - (TJ= 70°C) Drain-Source On Resistance Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time RDS(ON) VDS= -24V, VGS=0V mΩ VGS= -10V, ID= -5.3A VGS= -4.5V, ID= -4.2A VGS= -4.5V nC nS VDS= -24V VGS= -10V ID= -1A RG= 6Ω, RD= 15Ω VDS= -15V pF VGS= 0V f= 1MHz SOURCE-DRAIN DIODE Forward On Voltage 2 VSD - - -1.2 V VGS= 0V, IS= -2.3A Reverse Recovery Time Trr - 29 - nS VGS= 0V, IS= -5.3A, Reverse Recovery Charge Qrr - 20 - nC dl/dt= 100A/μs Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width ≦ 300 μs, Duty cycle ≦ 2% 2 3. Surface mounted on 1 in copper pad of FR4 board; 120°C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 24-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Jun-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4