SECOS STT4443

STT4443
-2.3A , -30V , RDS(ON) 120 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
TSOP-6
STT4443 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
A
E
6
5
L
4
B
FEATURES



Simple Drive Requirement
Smaller Outline Package
Surface mount package
F
2
3
C
REF.
A
B
C
D
E
F
Date Code
PACKAGE INFORMATION
H
J
K
DG
MARKING
4443

1
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
TOP VIEW
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
Continuous Drain Current 3
TA=70°C
Pulsed Drain Current 1
Power Dissipation
TA=25°C
ID
-1.8
A
IDM
-10
A
PD
1.14
W
0.01
W / °C
-55~150
°C
110
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
-2.3
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
3
RJA
Any changes of specification will not be informed individually.
Page 1 of 4
STT4443
-2.3A , -30V , RDS(ON) 120 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1
-
-2.5
V
VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
-1
-
-
-25
Drain-Source On-Resistance 2
RDS(ON)
-
-
120
-
-
170
-
4
-
Forward Transconductance
gfs
μA
mΩ
S
VDS= -30V, VGS=0
VDS= -24V, VGS=0
VGS= -10V, ID= -2A
VGS= -4.5V, ID= -1A
VDS= -5V, ID= -2A
Dynamic
2
Total Gate Charge
Qg
-
3
-
Gate-Source Charge
Qgs
-
0.78
-
Gate-Drain Charge
Qgd
-
1.6
-
Td(on)
-
7
-
Tr
-
6
-
Td(off)
-
15
-
Tf
-
7.5
-
Ciss
-
260
-
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Coss
-
55
-
Reverse Transfer Capacitance
Crss
-
44
-
Reverse Transfer Capacitance
Rg
-
4.3
5
nC
VDS= -25V,
VGS= -4.5V,
ID= -2A
nS
VDS= -15V,
VGS= -5V,
RG=3.3Ω,
RD=15Ω,
ID= -1A
pF
VGS=0,
VDS= -25V,
f=1.0MHz
Ω
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1.2
V
IS= -0.9A, VGS=0
Reverse Recovery Time
TRR
-
15
-
ns
IS= -2A, VGS=0
Reverse Recovery Charge
QRR
-
7
-
nC
dI/dt=100A/μs
2
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test
2
3. Surface mounted on 1 in copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
STT4443
Elektronische Bauelemente
-2.3A , -30V , RDS(ON) 120 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
STT4443
Elektronische Bauelemente
-2.3A , -30V , RDS(ON) 120 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4