SSG4920N 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and batterypowered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. B L D M A FEATURES N Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC Converter applications. J H PRODUCT SUMMARY VDS(V) 30 REF. SSG4920N RDS(on) m( 34@VGS=10V 41@VGS=4.5V C A B C D E F G ID(A) 6.9 6.0 PACKAGE INFORMATION G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D Package MPQ LeaderSize G D SOP-8 2.5K 13’ inch S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID @ TA = 25°C ±6.9 A ID @ TA = 70°C ±5.6 A IDM ±40 A IS 1.7 A PD @ TA = 25°C 2.1 W Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range PD @ TA = 70°C 1.3 W TJ, TSTG -55 ~ 150 °C 62.5 °C / W 110 °C / W THERMAL RESISTANCE RATINGS Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 22-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4920N 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS STATIC Gate Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID= 250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS= 24V, VGS= 0V - - 10 μA VDS= 24V, VGS= 0V, TJ= 55°C 20 - - A - - 34 - - 41 On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) mΩ VDS= 5V, VGS= 10V VGS= 10V, ID= 6.9A VGS= 4.5V, ID= 6.0A gfs - 25 - S VDS= 15V, ID= 6.9A VSD - 0.77 - V IS= 1.7A, VGS= 0V DYNAMIC 2 Total Gate Charge Qg - 4.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.4 - Turn-On Delay Time Td(on) - 12 - Tr - 10 - Td(off) - 60 - Tf - 15 - Trr - 50 - Rise Time Turn-Off Delay Time Fall Time Source-Ddrain Reverse Recovery Time nC nS ID= 6.9A VDS= 15V VGS= 4.5V VDD= 15V ID= 1A VGEN= 10V RL= 15Ω IF=1.7A, Di / Dt = 100A/μs Notes 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 22-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4920N Elektronische Bauelemente 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 22-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4920N Elektronische Bauelemente 6.9 A, 30 V, RDS(ON) 34 m Dual N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 22-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4