STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E B FEATURES L F Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Miniature TSOP-6 Surface Mount Package Saves Board Space. C PACKAGE INFORMATION MPQ LeaderSize TSOP-6 3K 7’ inch J K DG REF. Package H A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings N-Channel P-Channel 23 ±12 3.7 2.9 8 1.05 -23 ±12 -2.7 -2.1 -8 -1.05 1.15 0.7 -55 ~ +150 Unit V V A A A W ℃ Any changes of specification will not be informed individually. Page 1 of 7 STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente Parameter Maximum Junction to Ambient 1 THERMAL RESISTANCE RATINGS N-Channel Symbol Typ Max 93 110 t ≦ 10 sec RJA Steady State 130 150 P-Channel Typ Max 93 110 130 150 Unit ℃/W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Symbol Min. - -1 - - - - 100 - - -100 - - 1 - - -1 - - 10 - - -10 5 - - -5 - - N-Ch - - 58 VGS=4.5V, ID= 3.7A P-Ch - - 112 VGS=-4.5V, ID= 3.1A - - 82 - - 172 N-Ch - - 160 VGS=1.8V, ID= 2.2A P-Ch - - 210 VGS=-1.8V, ID= -2.0A - 10 - - 5 - - 0.80 - - -0.83 - P-Ch N-Ch P-Ch P-Ch Current N-Ch VGS(th) IGSS IDSS P-Ch On-Resistance Forward Transconductance 1 Diode Forward Voltage 1 http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A N-Ch P-Ch N-Ch 1 Test Conditions - Zero Gate Voltage Drain Drain-Source Unit 1 N-Ch N-Ch On-State Drain Current 1 Typ. Max. P-Ch N-Ch P-Ch N-Ch P-Ch ID(on) RDS(ON) gfs VSD VDS=VGS, ID=250uA V VDS=VGS, ID= -250uA uA VDS= 0 V, VGS= 12 V VDS= 0 V, VGS= -12 V VDS=16 V, VGS=0 V uA VDS=-16V, VGS=0 V VDS=16V, VGS=0 V, TJ=55℃ VDS= -16V, VGS=0 V, TJ=55℃ VDS = 5V, VGS=4.5 V A VDS = -5V, VGS= -4.5 V mΩ S S VGS=2.5V, ID= 2.7A VGS=-2.5V, ID= -2.2A VDS= 5V, ID= 3.7A VDS= -5V, ID= 3.1A IS= 1.05A, VGS= 0V IS= -1.05A, VGS= 0V Any changes of specification will not be informed individually. Page 2 of 7 STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente DYNAMIC 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf - 7.5 - - 3.8 - - 0.6 - - 0.6 - - 1.0 - - 1.5 - - 5 - - 5 - - 12 - - 15 - - 13 - - 20 - - 7 - - 20 - N-Channel VDS=15V, VGS= 4.5V, ID= 2.7A nC P-Channel VDS= -15V, VGS= -4.5V, ID= -3.1A N-Channel VDD= 15V, RGEN= 15Ω, VGS= 4.5V, ID= 1A nS P-Channel VDD= -15V, RGEN= 15Ω VGS= -4.5V, ID= -1A Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 7 STT3520C Elektronische Bauelemente http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Any changes of specification will not be informed individually. Page 5 of 7 STT3520C Elektronische Bauelemente N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 6 of 7 STT3520C Elektronische Bauelemente http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev. A N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m N & P-Channel Enhancement Mode Mos.FET Any changes of specification will not be informed individually. Page 7 of 7