2N3720 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) PNP SILICON TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 • High Current Gain Bandwidth Product 3 0.74 (0.029) 1.14 (0.045) • Hermetic TO39 Package 0.71 (0.028) 0.86 (0.034) 45° • Full Screening Options Available TO–39 (TO205AD) Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(cont) PD PD Tstg RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Collector Current Continuous Total Device Dissipation TA = 25 °C Derate above 25°C Total Device Dissipation TC = 25 °C Derate above 25°C Storage Temperature Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case -60V -60V -4V -1A -3A 1W 5.71mW / °C 6W 34.3mW / °C –65 to 200°C 175°C/W 29°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6018 Issue 1 2N3720 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min Typ Max V(BR)CEO Collector – Emitter Breakdown Voltage IC = -20mA IB = 0 ICBO Collector Cut-off Current VCB = -60V IE = 0 -10 μA VCE = -60V VBE(off)=-2V -10 μA VCE = -60V VBE(off)=-2V -1.0 mA mA ICEX Collector Cut-off Current -60 Unit V Tamb = 150°C IEBO Emitter Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE DC Current Gain VBE = -4V IC = 0 -1.0 IC =-1A, IB =-100mA -0.75 IC =-3A, IB =-300mA -1.5 IC =-1A, IB =-100mA -1.5 IC =-3A, IB =-300mA -2.3 IC =-500mA, VCE =-1.5V 20 IC =-1A, VCE =-1.5V 25 IC =-1A, VCE=-1.5V, TC=-40°C 180 V V — 15 DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC =-500mA VCE = -10V f = 30MHz Cobo Output Capacitance VCB = -10V IE = 0 f = 0.1MHz 120 pF Cibo Input Capacitance VEB = 0.5V IC = 0 f = 0.1MHz 1000 pF ton Turn on Time VCC=-12V,VBE(off) =0V,IC =1A,IB1 =0.1A 100 ns toff Turn off Time VCC=-12V, IC =1A, IB1 = IB2=100mA 400 ns 60 MHz (1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6018 Issue 1