SEMTECH_ELEC BAV99W

BAV99W
HIGH-SPEED DOUBLE SWITCHING DIODE
3
1
2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Symbol
Value
Unit
VRRM
85
V
VR
75
V
IF
150
130
mA
IFRM
500
mA
Continuous Forward Current
Single Diode Load 1)
Double Diode Load 1)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Square Wave; Tj = 25 OC Prior to Surge
at t = 1 µs
at t = 1 ms
at t = 1 s
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance from Junction to Ambient
1)
1)
IFSM
4
1
0.5
A
Ptot
200
mW
Tj
150
O
Tstg
-65 to +150
O
Rth j-a
625
K/W
Symbol
Max.
Unit
C
C
Device mounted on an FR4 printed-circuit board.
Characteristics at Tj = 25OC
Parameter
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, Tj = 150 OC
at VR = 75 V, Tj = 150 OC
Diode Capacitance
at f = 1 MHz; VR = 0
Reverse Recovery Time
at IF = 10 mA to IR = 10 mA, RL = 100 Ω; measured at IR = 1 mA
Forward Recovery Voltage
at IF = 10mA, tr = 20 ns
VF
0.715
0.855
1
1.25
V
IR
30
1
30
50
nA
µA
µA
µA
Cd
1.5
pF
trr
4
ns
Vfr
1.75
V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2006
BAV99W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2006