BAV99W HIGH-SPEED DOUBLE SWITCHING DIODE 3 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Symbol Value Unit VRRM 85 V VR 75 V IF 150 130 mA IFRM 500 mA Continuous Forward Current Single Diode Load 1) Double Diode Load 1) Repetitive Peak Forward Current Non-repetitive Peak Forward Current Square Wave; Tj = 25 OC Prior to Surge at t = 1 µs at t = 1 ms at t = 1 s Total Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance from Junction to Ambient 1) 1) IFSM 4 1 0.5 A Ptot 200 mW Tj 150 O Tstg -65 to +150 O Rth j-a 625 K/W Symbol Max. Unit C C Device mounted on an FR4 printed-circuit board. Characteristics at Tj = 25OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC Diode Capacitance at f = 1 MHz; VR = 0 Reverse Recovery Time at IF = 10 mA to IR = 10 mA, RL = 100 Ω; measured at IR = 1 mA Forward Recovery Voltage at IF = 10mA, tr = 20 ns VF 0.715 0.855 1 1.25 V IR 30 1 30 50 nA µA µA µA Cd 1.5 pF trr 4 ns Vfr 1.75 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2006 BAV99W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2006