BAS16W Silicon Epitaxial Planar Small Signal Diode High Speed Switching Diode 3 1 2 Marking Code: A6 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (at TS = 90 OC) IF 155 mA Repetitive Peak Forward Current IFRM 500 mA Non-repetitive Peak Forward Current at Square Wave; Tj = 25 OC Prior to Surge t = 1 µs t = 1 ms t=1s IFSM Total Power Dissipation (at TS = 90 OC) Ptot 170 mW Rth j-S 350 K/W Tj 150 O Tstg - 65 to + 150 O Symbol Max. Unit VF VF VF VF 715 855 1000 1250 mV mV mV mV IR IR IR IR 30 1 30 50 nA µA µA µA CD 1.5 pF trr 4 ns Vfr 1.75 V Repetitive Peak Reverse Voltage Thermal Resistance from Junction to Soldering Point Junction Temperature Storage Temperature Range 4 1 0.5 A C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time when switched from IF = 10 mA to IR = 10 mA, RL = 100 Ω; measured at IR = 1 mA Forward Recovery Voltage when switched from IF = 10 mA, tr = 20 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/08/2006 BAS16W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/08/2006