LL355 SWITECHING DIODE Applications • High speed switching Features • High Speed (tr = 1.2ns Typ.) • High reliability with high surge current handling capability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak reverse voltage VRM 90 V DC reverse voltage VR 80 V Peak forward current IFM 225 mA Mean rectifying current Io 100 mA Isurge 500 mA TJ 125 O -55 to +125 O Surge current (1s) Junction temperature Storage temperature Tstg C C Characteristics at Ta = 25 OC Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF - - 1.2 V IF = 100mA Reverse current IR - - 0.1 µA VR = 80V Capacitance between terminals CT - - 3 pF VR = 0.5V, f = 1MHZ Reverse recovery time trr - - 4 ns VR = 6V, IF = 10mA, RL = 100Ω SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/08/2002