SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 600 mA 60 Volts PNP High Speed Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2907A __ __ │ └ Screening 2/ __= Commercial │ TX= TX Level │ TXV= TXV Level │ S= S Level │ └ Package -4 = LCC4 /18 = TO-18 /46 = TO-46 Features: • • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 500 mW Replacement for 2N2907A and 2N2907AUA 2/ TX, TXV, S-Level Screening Available NPN Complimentary Parts Available (SFT2222A) Maximum Ratings3/ Symbol Value Units Collector – Emitter Voltage VCEO 60 Volts Collector – Base Voltage VCBO 60 Volts Emitter – Base Voltage VEBO 5 Volts Continuous Collector Current IC 600 mA Power Dissipation @ T A= 25ºC PD 500 mW TOP & Tstg -65 to +200 ºC RθJA 325 ºC/W Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) LCC4 TO-46 Notes: TO-18 1/ For ordering information, price, and availability contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @ 25ºC. 4/ Pulse test: pulse width= 300µsec, duty cycle= 2% PIN ASSIGNMENT Available Part Numbers: SFT2907A-4 SFT2907A/18 SFT2907A/46 Package Function Collector Emitter Base -4 /18 /46 Normal Normal Normal Pin 1 Pin 1 Pin 1 Pin 2 Pin 2 Pin 2 Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0022C DOC SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 3/ Symbol Min Max Units Collector – Emitter Sustaining Voltage IC= 10 mA BVCEO 60 –– Volts Collector Cutoff Current VCE= 50 V ICES –– 50 nA Collector Cutoff Current VCB= 50 V VCB= 60 V VCB= 50 V, TA= 150ºC ICBO –– 0.01 10 10 µA VEB= 4.0 V VEB= 5.0 V IEBO –– 0.05 10 µA VCE= 10 V, IC= 0.1 mA VCE= 10 V, IC= 1.0 mA VCE= 10 V, IC= 10 mA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 500 mA VCE= 10 V, IC= 10 mA, TA= -55ºC HFE 75 100 100 100 50 50 –– 450 — 300 –– –– VCE= 10 V, IC= 1.0 mA, f= 1 kHz hfe 100 — Emitter Cutoff Current DC Forward Current Transfer Ratio 4/ Small-signal Forward Current Transfer Ratio Collector – Emitter Saturation Voltage 4/ IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VCE(Sat) –– –– 0.4 1.6 Volts Base – Emitter Saturation Voltage 4/ IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VBE(Sat) 0.6 –– 1.3 2.6 Volts VCE= 20 V, IC= 20 mA, f= 100 MHz fT 200 –– MHz VCB= 10 V, f= 1 MHz cob –– 8.0 pF Input Capacitance VEB= 2 V, f= 1MHz cib –– 30 pF Switching Times A/ VCC= 30 V, IC= 150 mA, IB1= 15 mA VCC= 30 V, IC= 150 mA, IB1= IB2= 15 mA, VBE(off)= 3 V ton toff –– –– 45 300 ns Frequency Transition Output Capacitance A/ ton NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. toff DATA SHEET #: TR0022C DOC SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com LCC4 (-4) TO-18 (/18) TO-46 (/46) .105 .080 .500 MIN .019 3x Ø .016 .105 Ø.095 3 2 Ø.215 .209 Ø.187 .183 45° 1 .046 .036 .030 MAX NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. .048 .028 DATA SHEET #: TR0022C DOC