SFT5926/63 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 150V, 100 AMP POWER TRANSISTOR SILICON NPN Part Number / Ordering Information 1/ SFT5926 __ __ │ └ Screening 2/ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package /63 = TO-63 350 WATTS Features: • • • • • • High Frequency transistor with BVCEO to 120 Volts Enhanced SOA capability and Fast Switching High Power Dissipation: 350 Watts 200°C Operating Temperature Replacement for 2N5926 TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 120 Volts Collector – Base Voltage VCBO 150 Volts Emitter – Base Voltage VEBO 10 Volts Collector Current IC 100 Amps Base Current IB 20 Amps Total Device Dissipation @ TC = 25ºC Derate above 25ºC PD 350 2 W W/ºC Top & Tstg -65 to +200 ºC RθJC 0.5 ºC/W Operating & Storage Temperature Maximum Thermal Resistance Junction to Case NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-63 DATA SHEET #: TR0115A DOC SFT5926/63 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 3/ Symbol Min Max Units BVCEO 120 - Volts VCE = 150V VCE = 100V, TC = 150°C ICES - 2 10 mA VEB = 10V IEBO - 1 mA 20 10 5 10 - 120 100 0.6 1.5 1.5 2.5 hfe 5 20 –– SOA1 SOA2 SOA3 - - –– tON - 7 µsec tS tf - 4 6 µsec Collector – Emitter Breakdown Voltage* IC = 200mA Collector – Cutoff Current Emitter – Cutoff Current VCE = 2V, IC = 20A VCE = 2V, IC = 50A VCE = 4V, IC = 90A VCE = 2V, IC = 50A, TA = -65°C IC = 50A, IB = 5A IC = 90A, IB = 18A IC = 50A, VCE = 2V IC = 90A, VCE = 4V DC Current Gain * Collector – Emitter Saturation Voltage * Base – Emitter Voltage * Common Emitter Small Signal Gain VCE = 10V, IC = 5A, f= 100kHz VCE = 4V, IC = 50A,1s, TC = 25°C VCE = 50V, IC = 1A,1s, TC = 25°C VCE = 100V, IC = 0.5A,1s, TC= 25°C Safe Operating Area ON Time VCC = 50V, VBE1 = 11.2V RC = 1Ω, VBE2 = 10V RB = 2Ω Storage Time Fall Time NOTES: 3. POSITION OF LEADS IN RELATION TO HEXAGON IS NOT DEFINED. PIN ASSIGNMENT PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR VCE(Sat) VBE(on) –– Volts Volts TO-63 1. DIMENSION DOES NOT INCLUDE SEALING FLANGES. 2. PACKAGE CONTOUR OPTIONAL WITHIN DIMENSIONS SPECIFIED. hFE 1 SITTING PLANE .167 .090 .300 MAX 2 3x Ø.105 .060 .260 .240 3 Ø.875 .775 2 5/16-24 UNF-2A 1 .515 .485 2 Ø.313 .279 .105 MAX .495 .460 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 3 .515 .380 1.030 .937 .885 .855 DATA SHEET #: TR0115A Ø.775 .745 DOC