SFT4957A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 30 mA 30 Volts Dual PNP RF Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT4957A2 __ __ │ └ Screening 2/ __ = Commercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package: GW = Gullwing Maximum Ratings Features: • • • • • RF Switching Transistor Multiple Devices Reduce Board Space Replacement/Enhancement for 2N4957UB TX, TXV, S-Level screening available NPN complimentary parts available (SFT2857A2) Symbol Value Units Collector – Emitter Voltage VCEO 30 Volts Collector – Base Voltage VCBO 30 Volts Emitter – Base Voltage VEBO 3 Volts Continues Collector Current IC 30 mAmps Power Dissipation @ TC = 25ºC (each device) PD 200 mW Top & Tstg -65 to +200 ºC RθJC 290 ºC/W Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0077 A Doc SFT4957A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Collector – Emitter Sustaining Voltage Symbol Min Max Units IC = 1 mA BVCEO -30 –– Volts Collector Cutoff Current Vcb = -20 V ICBO1 –– 100 nA Collector Cutoff Current Vcb = -30 V ICBO2 –– 100 uA Collector Cutoff Current Vcb = -20 V, Ta= 150ºC ICBO3 –– 100 uA Veb = -3.0 V IEBO –– 100 uA VCE = -10V, IC = 0.5 mA VCE = -10V, IC = 2.0 mA VCE = -10V, IC = 5 mA VCE = -10V, IC =5 mA, Ta= -55ºC HFE1 HFE2 HFE3 HFE4 15 20 30 10 –– –– 165 –– VCE = -10V, IC = 2.0 mA hfe 12 36 VCE = -10V, f = 1MHz ccb –– 0.8 pF rbCc 1.0 16 psec Gpe 17 25 dB NF –– 3.5 dB Emitter Cutoff Current DC Forward Current Transfer Ratio * Frequency Transition (Small Signal Current Gain) @ f= 100 MHz CB feedback (output) Capacitance CB time constant Common emitter small signal power gain Noise Figure VCE =-10V, IC =2mA, f= 63.6 MHz VCE =-10V, IC = 2mA, f= 450 MHz Ic = 2 mA, Vce = -10 V, RL = 50Ω, f = 450 MHz NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. Available Part Numbers: SFT4957A2GW Package GW NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Pin 1 Collector1 PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Base1 Base2 Emitter2 Emitter1 Collector2 DATA SHEET #: TR0077 A Doc