SFT2222A2 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT2222A2 __ __ │ └ Screening 2/ __= Commercial │ TX= TX Level │ TXV= TXV Level │ S= S Level │ └ Package GW= Gullwing Features: • • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 660 mW Replacement for 2N2222AU TX, TXV, S-Level Screening Available 2/ NPN Complimentary Parts Available (SFT2907A2) Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 50 Volts Collector – Base Voltage VCBO 75 Volts Emitter – Base Voltage VEBO 6 Volts IC 800 mA PD 500 660 mW TOP & Tstg -65 to +200 ºC RθJ-PCB 265 ºC/W Continuous Collector Current Per Device Total Power Dissipation @ TA= 25ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to PCB) Gullwing (GW) 2x .050 (=.100) .015 3x .015 .015±.010 PIN 6 PIN 4 PIN 4 6x .010 PIN 6 6x .030 SSDI .125 .193 .350 ±.010 .025 PIN 3 PIN 3 PIN 1 .034 5x R.018 PIN 1 .107 .040 ±.010 Tolerances: .xx ±.01 .xxx ±.005 .107 .010 .130 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 6x R.010 .033 .035 DATA SHEET #: TR0030E DOC SFT2222A2 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Symbol Min Max Units Collector – Emitter Sustaining Voltage IC= 10 mA BVCEO 50 –– Volts Collector Cutoff Current VCE= 50 V ICES –– 50 nA ICBO –– IEBO –– HFE 50 75 100 100 30 35 0.01 10 10 0.01 10 –– 325 — 300 –– –– hfe 50 — –– –– 0.6 –– 0.3 1.0 1.2 2.0 VCB= 60 V VCB= 75 V VCB= 60 V, TA= 150ºC VEB= 4.0 V VEB= 6.0 V VCE= 10 V, IC= 0.1 mA VCE= 10 V, IC= 1.0 mA VCE= 10 V, IC= 10 mA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 500 mA VCE= 10 V, IC= 10 mA, TA= -55ºC Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio 5/ Small-signal Forward Current Transfer Ratio VCE= 10 V, IC= 1.0 mA, f= 1 kHz IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA Collector – Emitter Saturation Voltage 5/ Base – Emitter Saturation Voltage 5/ VCE(Sat) VBE(Sat) µA µA Volts Volts VCE= 20 V, IC= 20 mA, f= 100 MHz fT 250 –– MHz VCC= 30 V, IC= 150 mA IB1= IB2= 15 mA, VBE(off)= 3 V ton toff –– –– 35 300 ns Output Capacitance VCE= 10 V, f= 1MHz cob –– 8.0 pF Input Capacitance VCE= 0.5 V, f= 1MHz cib –– 25 pF Frequency Transition Switching Times NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @ 25ºC. 5/ Pulse Test: Pulse Width= 300µsec, Duty Cycle= 2% PIN ASSIGNMENT Available Part Numbers: SFT2222A2GW Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 GW Collector1 Base1 Emitter1 Collector2 Base2 Emitter2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0030E DOC