TIGER ELECTRONIC CO.,LTD Product specification BU2508DF Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 700 V Emitter-Base Voltage VEBO 6 V Collector Current IC 8.0 A Base Current IB 3.5 A Ptot 45 Total Dissipation at Max. Operating Junction Temperature Storage Temperature W Tj 150 o Tstg -65~150 o C TOP-3Fa C ELECTRICAL CHARACTERISTICS (Tcase = 25 ℃ unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICES VCB=1500V, IE=0 — — 1.0 mA Emitter Cut-off Current IEBO VEB=7.5V, IC=0 — 227 — mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 700 — — V hFE(1) VCE=5.0V, IC=1.0A — 13 — hFE(2) VCE=1.0V, IC=4.5A 4 — 10 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=4.5A,IB=1.12A — — 1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=4.5A,IB=1.7A — — 1.1 V IF=4.5A — 1.6 2.0 V Diode forward voltage VF