TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3904 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.2 A 0.625 W IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 μA IEBO VEB= 5V, IC=0 0.1 μA hFE1 VCE=1V, IC=10mA 100 hFE2 VCE=1V, IC=50mA 60 hFE3 VCE=1V, IC=100mA 30 Emitter cut-off current DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=0.5V, 35 ns Rise Time tr IC=10mA,IB1=1mA 35 ns Storage Time ts VCC=3V, IC=10mA 200 ns Fall Time tf IB1=IB2=1mA 50 ns CLASSIFICATION Rank Range OF 300 MHZ hFE1 O Y G 100-200 200-300 300-400 Typical Characteristics 2N3904