DAYA 2N3904

TO-92 Plastic-Encapsulate Transistors
2N3904
TRANSISTOR (NPN)
TO-92
FEATURE
z NPN silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the PNP transistor 2N3906 is
Recommended
z This transistor is also available in the SOT-23 case with
the type designation MMBT3904
1. EMITTER
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
0.2
A
0.625
W
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off
current
ICBO
VCB=60V, IE=0
0.1
μA
Collector cut-off
current
ICEO
VCE= 40V, IB=0
0.1
μA
IEBO
VEB= 5V, IC=0
0.1
μA
hFE1
VCE=1V,
IC=10mA
100
hFE2
VCE=1V,
IC=50mA
60
hFE3
VCE=1V,
IC=100mA
30
Emitter cut-off
current
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB=5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=50mA, IB=5mA
0.95
V
Transition frequency
fT
VCE=20V,IC=10mA,f=100MHz
Delay Time
td
VCC=3V,VBE=0.5V,
35
ns
Rise Time
tr
IC=10mA,IB1=1mA
35
ns
Storage Time
ts
VCC=3V, IC=10mA
200
ns
Fall Time
tf
IB1=IB2=1mA
50
ns
CLASSIFICATION
Rank
Range
OF
300
MHZ
hFE1
O
Y
G
100-200
200-300
300-400
Typical Characteristics
2N3904