TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES z General Purpose Switching Application z Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.15 A PC Collector Power Dissipation 0.625 W 200 ℃/W RθJA Thermal Resistance From Junction To Ambient Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA ,IE=0 60 V Collector-emitter breakdown voltage V(BR) CEO IC=5mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=6V, IC=2mA 70 hFE(2) VCE=6V, IC=150mA 25 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA DC current gain fT Transition frequency Collector Output Capacitance 0.25 1 VCE=10V,IC=1mA Cob 700 80 VCB=10V, IE=0, f=1MHz V V MHz 3.5 pF CLASSIFICATION OF hFE(1) RANK O Y GR BL RANGE 70-140 120-240 200-400 300-700 A,Dec,2010