F63 4 WF WFF 634 FET Silicon N-Channel MOS OSF Featu res ■ 9A, 250V, R DS(on)(Max 0.45Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 41nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) pt ion Gene nerral Descri ript ption Thi s Po w e r MO S FET is pr odu c e d us i n g Wi n s e m i ’ s a dv anc e d pl a n a r str i p e , DM O S te c h n ol o g y . Th is la t es t te c h n o l o g y ha s bee n esp e c i a l l y de s i g n e d to mi n i m i z e on - s t a t e r e s i s t a n c e , ha v e a hi g h r u g g e d av a l a n c h e ch a r a c t e r i s t i c s . T h i s d e v i c e s is sp e c i a l l y we l l sui te d fo r lo w vol ta ge app l i cati ons suc h as auto mo ti ve, hi gh effici ency switchi ng for DC/DC conv er ter s, and DC motor control. ng s Absolute Max axiimum Rati ting ngs Symbol V DSS P a r am e t e r Value Uni Unitts 250 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5 A 72 A ±20 V 300 mJ Drain Source Voltage ID IDM Drain Current Pulsed (Note1) V GS Gate to Source Voltage E AS Single Pulsed Avalanche Energy E AR Repetitive Avalanche Energy (Note 1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns 48 W 0.42 W/℃ -55~150 ℃ 300 ℃ (Note 2) Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature ent li mite d by jun ction te mp erat ur e *Dr ain curr rre lim ted unc tem atu al Characteri stics Therm rmal ris Symbol e te r Param ame Va lue Min Typ Max Uni Unitts R QJC Thermal Resistance, Junction-to-Case - - 2.60 ℃/W R QCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W R QJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. F63 4 WF WFF 634 C) Elec ecttrical Charac actteristics (Tc = 25°C Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±20 - - V IDSS VDS = 200 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 250 - - V Break Voltage Temperature ΔBV DSS/ ID=250μA, Referenced to 25℃ - 0.37 - V/℃ Gate leakage current Gate−source breakdown voltage Drain cut−off current ΔTJ Coefficient Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 5.1A - - 0.45 Ω Forward Transconductance gfs VDS = 50 V, ID = 5.1A 1.6 - S Input capacitance C iss VDS = 25 V, - 1220 - Reverse transfer capacitance C rss VGS = 0 V, - 32 - Output capacitance C oss f = 1 MHz - 130 - VDD =125 V, - 9.6 - ton ID =5.6A - 21 - tf RG=12Ω - 42 - - 19 - - 41 51.8 - 6.5 - - 22 - Rise time Turn−on time tr Switching time Fall time Turn−off time pF ns (Note4,5) toff Total gate charge (gate−source - VDD = 200 V, Qg VGS = 10 V, plus gate−drain) nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 5.6A (Note4,5) urce−Drain Ratin gs and Ch arac C) So Sou ing Cha actteristics (Ta = 25°C Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 8.1 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8.1 A, VGS = 0 V - 1.4 2 V Reverse recovery time trr IDR = 5.6 A, VGS = 0 V, - 198 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.2 2.4 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS =9 A,V DD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance F63 4 WF WFF 634 3/7 Steady, keep you advance F63 4 WF WFF 634 4/7 Steady, keep you advance F63 4 WF WFF 634 cuit & Waveform Fig Fig..10 Gate Tes estt Cir Circ ve Switchin g Test Cir cuit & Waveform Fig Fig..1 1 Res esiisti tiv ing Circ clamped Ind uc ti ve Switc hing Tes cuit & Waveform Fig Fig..12 Un Unc Induc ucti tiv tching estt Cir Circ 5/7 Steady, keep you advance F63 4 WF WFF 634 k Diode Rec overy dv /dt Test Cir cuit & Waveform Fig Fig..13 Pea eak eco dv/dt Circ 6/7 Steady, keep you advance F63 4 WF WFF 634 0F Pa ckage Dim ension TO TO--22 220 Pac Dime Unit nit::m m 7/7 Steady, keep you advance