WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description D This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S SOT-23 Marking: H03F Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage ID Continuous Drain Current(Note 1) PD Total Power Dissipation(Note 1) ID Continuous Drain Current(Note 2) PD IDM Total Power Dissipation(Note 2) Drain Current Pulsed Value Units -20 V Tc=25℃ −2.8 Tc=85℃ Tc=25℃ t=10s -1.7 -3.2 0.80 1.25 -1.8 -1.3 0.42 -7.5 ±8 V C=100pF,RS = 1500Ω 225 V -55~150 ℃ 260 ℃ Steady State t≤10s Steady State t≤10s Steady State VGS Gate to Source Voltage ESD ESD Capability (Note 3) TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ A W A W A Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Units ℃/W ℃/W ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Rev. A Mar.2010-H03F Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. P03-3 WFY3P02 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±8 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS = -16 V, VGS = 0 V - - -1.0 μA V(BR)DSS ID = -250 μA, VGS = 0 V -20 - - V Gate threshold voltage VGS(th) VDS = VDS, ID =-250 μA -0.40 - -1.5 V Drain−source ON resistance RDS(ON) - 95 130 122 150 Forward Transconductance gfs VDS = −5.0 V, ID = −2.8 A - 6.5 - Input capacitance Ciss VDS = -6 V, - 477 - Reverse transfer capacitance Crss VGS = 0 V, - 80 - Output capacitance Coss f = 1 MHz - 127 - Turn-on Delay time td(on) VGS = −4.5 V, - 5 Turn−on Rise time tr VDS = −6 V, - 19 - Turn-off Delay time td(off) ID = - 95 - RG = 6.0 Ω, RL=6Ω, - 65 - Drain−source breakdown voltage Switching time (Note 5) Turn−off Fall time tf VGS = −4.5 V, ID = −2.8 A VGS = −2.5 V, ID = −2.0 A −1.0 A, Total gate charge Qg VGS = −4.5 V, - 5.4 8.5 Gate−source charge Qgs VDS = −10 V, - 0.8 - Gate−drain (“miller”) Charge Qgd ID = −2.8 A - 1.1 - mΩ S pF ns nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - -1.6 A Pulse drain reverse current IDRP - - - -7.5 A Forward voltage (diode) VDSF - -0.82 -1.2 V IDR = -1.6A, VGS = 0 V Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/5 Steady, all for your advance WFY3P02 Fig. 1 On-State Characteristics Fig.3 On−Resistance vs. Drain Current and Fig.2 Transfer Current Characteristics Fig.4 Diode Forward Voltage vs. Current Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/5 Steady, all for your advance WFY3P02 Fig.7 Resistive Switching Time Variation vs. Gate Resistance Fig.9 Drain−to−Source Leakage Current vs. Voltage Fig.8 Maximum Drain Current vs Case Temperature Fig.10 On−Resistance vs. Drain Current and Temperature 4/5 Steady, all for your advance WFY3P02 SOT-23 Package Dimension DIM A A1 B C D E F G H I J MILLIMTERS MIN INCHES MAX MIN 0.95 1.90 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 50o MAX 0.037 0.074 3.00 1.70 3.10 1.30 0.10 0.50 0.20 0.60 10o 0.102 0.055 0.110 0.039 0.000 0.014 0.004 0.012 50o 5/5 Steady, all for your advance 0.118 0.067 0.122 0.051 0.004 0.020 0.008 0.024 10o