AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A RDS(ON) < 7mΩ RDS(ON) < 8mΩ RDS(ON) < 9mΩ -RoHS Compliant -Halogen Free (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -4V) ESD Protected! D SOIC-8 D Rg G G S S Absolute Maximum Ratings TJ=25°C unless otherwise noted Symbol Parameter V Drain-Source Voltage DS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation B ID IDM TA=70°C TA=25°C Junction and Storage Temperature Range t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. A -160 3.1 W 2.0 TJ, TSTG Symbol AD V -13 PD TA=70°C A ±20 -17 C Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead -30 Units V Maximum RθJA RθJL -55 to 150 Typ 31 59 16 Max 40 75 24 °C Units °C/W °C/W °C/W www.aosmd.com AO4447AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID =-250µA, VGS = 0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS = 0V, VGS =±16V VGS(th) Gate Threshold Voltage VDS =VGS ID =-250µA -0.8 ID(ON) On state drain current VGS =-10V, VDS =-5V -160 TJ = 55°C VGS =-10V, ID =-17A Static Drain-Source On-Resistance TJ=125°C Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -1.6 V 5.5 7 A 8 VGS =-4V, ID =-13A 6.9 9 VDS =-5V, ID =-17A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance -1.3 8.5 Forward Transconductance 70 -0.62 4580 VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-15V, ID=-17A VGS=-10V, VDS=15V RL=-0.9Ω, RGEN=3Ω mΩ S -1 V -3 A 5500 pF 755 pF 564 VGS=0V, VDS=0V, f=1MHz µA µA 7 Diode Forward Voltage IS =-1A,VGS = 0V Maximum Body-Diode Continuous Current Units ±10 6.5 VSD Coss -5 VGS =-4.5V, ID =-15A gFS IS Max V VDS =-30V, VGS = 0V IDSS RDS(ON) Typ pF 160 210 Ω 87 105 nC 41 nC 12.8 nC 17 nC 180 ns 260 1.2 ns µs 9.7 µs trr Body Diode Reverse Recovery Time IF=-17A, dI/dt=300A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs 77 40 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. #REF! F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 0: Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 160 -10V 140 -4V - 120 VDS=-5V -3.5V 80 60 80 -ID(A) -ID (A) 100 -3V 60 40 40 125°C 20 VGS= -2.5V 20 25°C 0 0 0 1 2 3 4 5 0 10 2 3 4 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=-4V 6 VGS=-4.5V VGS=-10V 4 2 0 5 10 15 1.6 VGS= -10V ID= -17A 1.4 VGS= -4.5V ID= -15A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 1E+02 20 ID= -17A 1E+01 16 125°C IS (A) RDS(ON) (mΩ) 1E+00 12 1E-01 125°C 8 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 4 25°C OUT OF SUCH APPLICATIONS OR USES OF 25°C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 1E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E) Voltage(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=-15V ID= -17A 6000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 0 20 40 60 80 0 100 5 30 10µs RDS(ON) limited 100µs 1m 10ms 1 TJ(Max)=150°C TA=25°C 0.1 1 10 1 0.00001 I =-6.5A, dI/dt=100A/µs 10 100 F 1 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 100ms 10s DC 0.01 0.01 Power (W) -ID (Amps) 25 TJ(Max)=150°C TA=25°C 100 ZθJA Normalized Transient Thermal Resistance 20 1000 1000 0.1 15 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447AL Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off t on Vgs Rg VDC - DUT Vgs td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com