AOD4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current applications. VDS (V) = -40V ID = -40A RDS(ON) < 15mΩ RDS(ON) < 20mΩ -RoHS Compliant -Halogen Free* (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G S G S S G Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,H Pulsed Drain Current TC=100°C Avalanche Current C Power Dissipation B C ±20 V TA=70°C Alpha & Omega Semiconductor, Ltd. IDM -115 IAR -42 mJ 88 31 W 2.5 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 62.5 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case D,F -31 PD TC=100°C Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient ID EAR TA=25°C Power Dissipation A Units V -40 C Repetitive avalanche energy L=0.1mH TC=25°C Maximum -40 RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W www.aosmd.com AOD4185 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -115 ±100 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C 50 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-20V, ID=-20A 2.5 Units µA nA V A 20 VSD Rg 15 23 IS Output Capacitance 12.5 16 VDS=-5V, ID=-20A Reverse Transfer Capacitance -3 19 Forward Transconductance Crss -1.9 VGS=-4.5V, ID=-15A gFS Coss Max V VDS=-40V, VGS=0V VGS(th) RDS(ON) Typ mΩ S -1 V -20 A 2550 pF 280 pF 190 pF 4 6 Ω 42 55 nC 18.6 7 nC Qgd Gate Drain Charge 8.6 nC tD(on) Turn-On DelayTime 9.4 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 55 ns tf trr Turn-Off Fall Time IF=-20A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 47 Body Diode Reverse Recovery Time VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω 30 ns 49 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient ther mal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTBD mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. TBD G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 VDS=-5V -6.0V -10V 100 -4.5V 80 -ID(A) -ID (A) 80 -4.0V 60 60 40 40 ` 125°C VGS=-3.5V 20 20 25°C 0 0 0 1 2 3 4 5 1.5 2 -VDS (Volts) Figure 1: On-Region Characteristics 22 1.8 RDS(ON) (mΩ ) Normalized On-Resistance 2 VGS=-4.5V 18 16 14 VGS=-10V 12 10 3.5 4 4.5 5 VGS=-10V ID=-20A 1.6 1.4 VGS=-4.5V ID=-15A 1.2 1 0.8 0.6 0 10 20 30 40 50 60 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 45 150 ID=-20A 40 10 35 1 30 0.1 -IS (A) RDS(ON) (mΩ ) 3 -VGS(Volts) Figure 2: Transfer Characteristics 24 20 2.5 125°C 25 mJ 125°C 0.01 25°C 0.001 20 25°C 15 0.0001 10 0.00001 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=-20V ID=-20A 3000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2500 2000 1500 1000 Crss 2 Coss 500 0 0 0 5 10 15 20 25 30 35 40 0 45 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 100µs 10 1ms 10ms 1 1000 100 DC TJ(Max)=175°C TC=25°C 0.1 0.1 1 10 100 -VDS (Volts) 10 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=2.4°C/W 10 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ Jc Normalized Transient Thermal Resistance Power (W) -ID (Amps) 100 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse mJ 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 70 -Current rating ID (A) Power Dissipation (W) 60 50 40 30 20 40 30 20 10 10 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note B) 10000 TJ(Max)=150°C TA=25°C Power (W) 1000 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4185 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com