AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V ID = 24A RDS(ON) < 20mΩ RDS(ON) < 26mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Avalanche Current C Power Dissipation C B C 15 IDM 50 A Junction and Storage Temperature Range Maximum Junction-to-Case B 7.7 IAS, IAR 17 A EAS, EAR 14 mJ 20 8.3 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 3.1 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A A IDSM PD TC=100°C TA=25°C Power Dissipation V 9.5 TA=70°C Repetitive avalanche energy L=0.1mH TC=25°C ±20 ID TA=25°C Continuous Drain Current A Units V 24 TC=100°C Pulsed Drain Current Maximum 30 RθJA RθJC Typ 30 60 5 °C Max 40 75 6 Units °C/W °C/W °C/W www.aosmd.com AON7410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 50 ±100 VGS=10V, ID=8A 1.8 2.5 16 20 24 29 21 26 Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=8A nA V mΩ S 1 V 20 A pF 440 550 660 77 110 143 pF 33 55 77 pF 3 4 4.9 Ω 7.8 9.8 12 nC 3.6 4.6 5.5 nC 1.4 1.8 2.2 nC 1.3 2.2 3 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A, dI/dt=500A/µs 7 9 11 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 12 15 18 Body Diode Reverse Recovery Time µA A VGS=4.5V, ID=7A gFS TJ=125°C Units V VDS=30V, VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω 5 ns 3.2 ns 24 ns 6 ns ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev11: Jul-2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 VDS= 5V 10V 4.5V 4V 40 40 30 ID(A) ID (A) 30 3.5V 20 20 125°C 10 10 VGS= 3V 25°C 0 0 0 1 2 3 4 5 1 VDS (Volts) Figure 1: On-Region Characteristics 26 Normalized On-Resistance RDS(ON) (mΩ Ω) 3 4 VGS(Volts) Figure 2: Transfer Characteristics 5 1.8 24 VGS= 4.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 8A 1.6 1.4 VGS= 4.5V ID= 7A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 50 ID= 8A 45 1E+01 40 1E+00 35 1E-01 30 IS (A) RDS(ON) (mΩ Ω) 2 125°C 25 1E-02 125°C 1E-03 20 25°C 1E-04 15 25°C 1E-05 10 1E-06 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 8A Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 200 Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 10 15 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 300 100 TJ(Max)=150°C TC=25°C 10µs 10 100µs Power (W) ID (Amps) 20 1ms DC 1 RDS(ON) limited 200 100 0.1 TJ(Max)=150°C TA=25°C 0 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com AON7410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 Current rating ID(A) Power Dissipation (W) 25 15 10 5 0 20 10 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 1000 TA=25°C Power (W) 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA D=Ton/T RθJA=75°C/W TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 0.01 Single Pulse Single Pulse 0.001 0.00001 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance(Note H) Alpha & Omega Semiconductor, Ltd. 0.001 100 1000 www.aosmd.com AON7410 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com