AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V (VGS = 10V) ID = 13.5A RDS(ON) < 10mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) - RoHS Compliant. - Halogen Free DFN 3x3 Top View D Bottom View S S S G Pin 1 D D G D D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,G Pulsed Drain Current C TA=70°C A 35 14 Junction and Storage Temperature Range 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. 10 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D A 80 IDSM TA=25°C Power Dissipation V 13.5 TA=25°C B ±20 20 ID IDM TC=25°C Power Dissipation Units V 20 TC=100°C Continuous Drain Current B Maximum 30 RθJA RθJC Typ 30 60 3.1 °C Max 40 75 3.7 Units °C/W °C/W °C/W www.aosmd.com AON7702 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V 100 TJ=55°C 500 100 nA 3 V 8 10 12 15 VGS=4.5V, ID=11A 11 14 VDS=5V, ID=13.5A 21 VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 VGS=10V, ID=13.5A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10v) Total Gate Charge Qg (4.5v) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time A 0.38 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA 1.6 Gate-Body leakage current Gate Threshold Voltage Output Capacitance Units V VDS=30V, VGS=0V IGSS Coss Max 30 VGS(th) IS Typ 2390 VGS=0V, VDS=15V, f=1MHz S 0.5 V 6 A 4250 pF 480 pF 180 VGS=0V, VDS=0V, f=1MHz 0.5 VGS=10V, VDS=15V, ID=13.5A VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω mΩ pF 1 1.5 Ω 37 48 nC 16 21 nC 9.3 nC 5.5 nC 9 ns 14 ns 32 ns 16 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=13.5A, dI/dt=100A/µs 29 Qrr Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=100A/µs 15 38 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. air environment with T A=25°C. The SOA E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still 150 curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. 35 Rev0: Sept 2007 14 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 80 10V 4.5V VDS=5V 35 4.0V 6.0V 30 60 ID(A) ID (A) 25 3.5V 40 20 125°C 15 ` 20 25°C 10 VGS=3V -40°C 5 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Figure 1: On-Region Characteristics 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 14 Normalized On-Resistance 1.8 12 RDS(ON) (mΩ) 2 VGS=4.5V 10 VGS=10V 8 1.6 VGS=10V ID=13.5A 1.4 VGS=4.5V ID=11A 1.2 1 0.8 6 0 5 10 15 20 0.6 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 30 ID=13.5A 150 25 25°C 15 IS (A) RDS(ON) (mΩ) 1 35 14 20 125°C 125°C 0.1 25°C 10 -55 to 150 0.01 5 -40°C -40°C 0 0.001 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 60 3 0.4 0.6 75 VSD (Volts) 3.5 0.8 1.0 Figure 6: Body-Diode Characteristics www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=13.5A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 1000 100 30 TJ(Max)=150°C TA=25°C 10µs 100µs 1 1ms RDS(ON) limited 0.1 TJ(Max)=150°C TA=60°C DC 10ms 100ms 1s 10s Power (W) ID (Amps) 10 0.01 0.1 1 10 10 ZθJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 10 1 0.0001 0.001 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 100 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 35 14 0.1 -55 to 150 PD 0.01 Ton 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 60 3 10 T 75 3.5 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com