TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 • • • • • • • • • • • High-Resolution, Solid-State Image Sensor for PAL B/W TV Applications 8-mm Image-Area Diagonal, Compatible With 1/2” Vidicon Optics 699 (H) x 288 (V) Active Elements in Image-Sensing Area Low Dark Current Electron-Hole Recombination Antiblooming Dynamic Range . . . More Than 70 dB High Sensitivity High Photoresponse Uniformity High Blue Response Single-Phase Clocking Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics DUAL-IN-LINE PACKAGE (TOP VIEW) SUB 1 IAG 2 ABG 3 TDB 4 OUT3 5 OUT2 6 OUT1 7 AMP GND 8 ADB 9 SUB 10 20 19 18 17 16 15 14 13 12 11 SUB IAG ABG SAG IDB SRG3 SRG2 SRG1 TRG CDB description The TC277 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W PAL TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small size, high reliability, and low cost. The image-sensing area of the TC277 is configured into 288 lines with 699 elements in each line. Thirty-three elements are provided in each line for dark reference. The blooming-protection feature incorporated into the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements by one-half of a vertical line during the charge-integration period in alternate fields, and effectively increasing the vertical resolution and minimizing aliasing. The device can also be run as a 732 (H) by 288 (V) noninterlaced sensor with significant reduction in the dark signal. The image is read out through three outputs, each of which reads out every third column. A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability. The TC277 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC277 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. Copyright 1991, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 functional block diagram Top Drain 1 20 SUB IAG TDB ABG ADB OUT3 19 Image Area With Blooming Protection 2 4 ABG Dark Reference Elements 3 9 Amplifiers 5 Storage Area 6 15 14 OUT1 13 7 12 11 Dummy Elements 2 IAG 18 17 OUT2 SUB Clearing Drain 8 AMP GND 10 SUB POST OFFICE BOX 655303 11 CDB • DALLAS, TEXAS 75265 16 IDB SAG SRG3 SRG2 SRG1 TRG TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 sensor topology diagram 735 Columns 699 Columns 2 Columns 288 Lines 34 Columns Image-Sensing Image-Sensing Area Area 580 Lines 2 Lines 290 Lines Image-Storage Area 233 11 Dummy Pixels 11 Dark Pixels Terminal Functions TERMINAL I/O DESCRIPTION NAME ABG† NO. 3 I Antiblooming gate ABG† 18 I Antiblooming gate ADB 9 I Supply voltage for amplifier-drain bias AMP GND 8 CDB IAG† 11 I Amplifier ground Supply voltage for clearing-drain bias 2 I Image-area gate IAG† 19 I Image-area gate IDB 16 I Supply voltage for input-diode bias OUT1 7 O Output signal 1 OUT2 6 O Output signal 2 OUT3 5 O Output signal 3 SAG 17 I Storage-area gate SRG1 13 I Serial-register gate 1 SRG2 14 I Serial-register gate 2 SRG3 SUB† 15 I Serial-register gate 3 1 Substrate and clock return SUB† SUB† 10 Substrate and clock return TDB 4 I TRG 12 I 20 Substrate and clock return Supply voltage for top-drain bias Transfer gate † All pins of the same name should be connected together externally. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 detailed description The TC277 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area, (3) the multiplexer with serial registers and transfer gates, and (4) the low-noise signal-processing amplifier with charge-detection nodes. Location of each of these blocks is shown in the functional block diagram. image-sensing and image-storage areas Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. After the completion of integration, the signal charge is transferred into the storage area. Thirty-three full columns and one half-column of elements at the right edge of the image-sensing area are shielded from incident light; the 33 full columns of elements provide the dark reference used in subsequent video-processing circuits to restore the video-black level. There are also one full column and one half-column of light-shielded elements at the left edge of the image-sensing area and two lines of light-shielded elements between the image-sensing and image-storage areas. The latter prevent charge leakage from the image-sensing area into the image-storage area. multiplexer with transfer gates and serial registers The multiplexer and transfer gates transfers the charge line-by-line from each group of columns into the corresponding serial register and prepares it for readout. Multiplexing is activated during the horizontal-blanking interval by applying appropriate pulses to the transfer gates and serial registers. The required pulse timing is shown in Figure 3. A drain is included in this area to provide the capability to quickly clear the image-sensing and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special circumstances when nonstandard TV operation is desired. correlated-clamp sample-and-hold amplifier with charge-detection nodes Figure 4 illustrates the correlated-clamp sample-and-hold amplifier circuit. Charge is converted into a video signal by transferring the charge onto a floating-diffusion structure in detection node 1 that is connected to the gate of MOS transistor Q1. The proportional charge-induced signal is then processed by the circuit shown in Figure 4. This circuit consists of a low-pass filter formed by Q1 and C2, coupling-capacitor C1, dummy-detection node 2, which restores the dc bias on the gate of Q3, sampling-transistor Q5, holding capacitor C3, and output-buffer Q6. Transistors Q2, Q4, and Q7 are current sources for each corresponding stage of the amplifier. The parameters of this high-performance signal-processing amplifier have been optimized to minimize noise and maximize the video signal. The signal processing begins with a reset of detection node 1 and restoration of the dc bias on the gate of Q3 through the clamping function of dummy-detection node 2. After the clamping is completed, the new charge packet is transferred onto detection node 1. The resulting signal is sampled by the sampling-transistor Q5 and is stored on the holding-capacitor C3. This process is repeated periodically and is correlated to the charge transfer in the registers. The correlation is achieved automatically since the same clock lines used in registers φ-S2 and φ-S3 for charge transport serve for reset and sample. The multiple use of the clock lines significantly reduces the number of signals required to operate the sensor. The amplifier also contains an internal voltage-reference generator that provides the reference bias for the reset and clamp transistors. Since the detection nodes and the corresponding amplifiers are located some distance from the edge of the storage area, eleven dummy elements are used at the end of each serial register to span the distance. The location of the dummy elements, which are considered to be part of the amplifiers, is shown on the functional block diagram. 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 9.2 µm (H) Light Clocked Barrier φ-PI 16.8 µm (V) Virtual Barrier Antiblooming Gate φ-ABG Antiblooming Clocking Levels Virtual Well Clocked Well Accumulated Charge Figure 1. Charge-Accumulation Process φ-PS Clocked Phase Virtual Phase Channel Stops Figure 2. Charge-Transfer Process POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 Composite Blanking ABG IAG SAG TRG SRG 1 SRG2 SRG3 Expanded Horizontal Blanking Interval Figure 3. Timing Diagram 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 Reference Generator ADB Reset Gate and Output Diode Detection Node 1 CCD Register Clocked Virtual Gate Gate Detection Node 2 Q3 Q1 Q6 C1 Q2 SRG1 C2 SRG2 Q5 VO C3 Q4 Q7 SRG3 Figure 4. Correlated-Clamp Sample-and-Hold Amplifier and Charge-Detection Nodes POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 spurious-nonuniformity specification The spurious-nonuniformity specification of the TC277 CCD grades – 10, – 20, – 30, and – 40 is based on several sensor characteristics. • • • • • • Amplitude of the nonuniform pixel Polarity of the nonuniform pixel – Black – White Location of the nonuniformity (see Figure 5) – Area A – Element columns near horizontal center of the area – Element rows near vertical center of the area – Area B – Up to the pixel or line border – Up to area A – Other – Edge of the imager – Up to area B Nonuniform pixel count Distance between nonuniform pixels Column amplitude The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7. 17 Pixels 9 Lines 332 Pixels 278 Lines A B 13 Lines 17 Pixels Figure 5. Sensor-Area Map 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 mV Amplitude % of Total Illumination t t Figure 6. Pixel Nonuniformity, Dark Condition Figure 7. Pixel Nonuniformity, Illuminated Condition The grade specification for the TC277 is as follows (CCD video-output signal is 50 mV ±10 mV): Pixel nonuniformity: DARK CONDITION PART NUMBER TC277-20 TC277-30 TC277 40 TC277-40 PIXEL AMPLITUDE, x AMPLITUDE ( ) (mV) ILLUMINATED CONDITION NONUNIFORM PIXEL TYPE WHITE BLACK W/B† AREA AREA AREA A B A B A B DISTANCE SEPARATION % OF TOTAL ILLUMINATION AREA A AREA B TOTAL COUNT‡ x > 3.5 0 0 0 0 0 0 x>5 0 0 2.5 < x ≤ 3.5 2 5 2 5 2 5 5.0 < x ≤ 7.5 2 5 x > 3.5 0 0 0 0 0 0 x > 7.5 0 0 3.5 < x ≤ 7 3 7 3 7 3 7 7.5 < x ≤ 15 3 7 x>7 0 0 0 0 0 0 x > 15 0 0 X Y AREA — — — — 12 100 80 A 15 — — — † White and black nonuniform pixel pair ‡ The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count. Column nonuniformity: WHITE BLACK AREAS A AND B AREAS A AND B x > 0.3 0 0 x > 0.5 0 0 x > 0.7 0 0 PART NUMBER COLUMN AMPLITUDE, x AMPLITUDE (mV) TC277-20 TC277-30 TC277-40 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VCC: ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V Input voltage range, VI: ABG, IAG, SRG, SAG, TRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to 15 V Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 10°C to 45°C Storage temperature range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 30°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to the substrate terminal. recommended operating conditions MIN Supply voltage, VCC ADB, CDB, IDB, TDB 1.5 Intermediate level§ IAG SRG1 SRG2 SRG1, SRG2, SRG3 –11 High level 1.5 Low level –11 High level 2 TRG Load capacitance –9 2 2.5 –9 4 6 – 2.3 Low level SAG V 2.5 – 5.7 Low level Intermediate level§ ABG 2 V –7 High level 1.5 Low level –11 High level 1.5 Low level –11 2 2.5 2 2.5 –9 –9 IAG, SAG 3.34 SRG1, SRG2, SRG3, TRG 4.46 ABG 3.34 OUT1, OUT2, OUT3 Operating free-air temperature, TA UNIT V 0 High level Clock frequency, fclock MAX 12 Substrate bias voltage Input voltage, voltage VI‡ NOM –10 MHz 6 pF 45 °C ‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. § Adjustment is required for optimal performance. 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 electrical characteristics over recommended operating ranges of supply voltage and operating free-temperature (unless otherwise noted) PARAMETER Dynamic range (see Note 2) Antiblooming disabled (see Note 3) Charge-conversion factor Charge-transfer efficiency (see Note 4) Signal-response delay time, τ (see Note 5 and Figure 11) Gamma (see Note 6) Output resistance 1/f noise (5 kHz) Noise voltage MIN TYP† 60 70 UNIT dB 3.8 4 4.2 0.99990 0.99995 1 18 20 22 0.97 0.98 0.99 700 800 µV/e ns Ω 0.1 Random noise (f = 100 kHz) µV/√Hz 0.08 Noise-equivalent signal 25 Rejection ratio at 4.46 MHz MAX ADB (see Note 7) 20 SRG1, SRG2, SRG3 (see Note 8) 40 ABG (see Note 9) 20 Supply current electrons 5 IAG mA 6500 SRG1, SRG2, SRG3 Input capacitance, Ci dB 68 ABG 2400 TRG 180 pF SAG 6800 † All typical values are at TA = 25 °C. NOTES: 2. Dynamic range is – 20 times the logarithm of the mean-noise signal divided by the saturation-output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical-input signal. 5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state. 6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this value represents points near saturation): ǒ Ǔ +ǒ Exposure (2) Exposure (1) g Ǔ Output signal (2) Output signal (1) 7. ADB rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. 8. SRGn rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn. 9. ABG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 optical characteristics, TA = 40°C (unless otherwise noted) PARAMETER Sensitivity No IR filter MIN Saturation signal, Vsat (see Note 12) Antiblooming disabled, interlace off Maximum usable signal, Vuse Antiblooming enabled, interlace on Blooming overload ratio (see Note 13) Blooming-overload 320 mV 200 mV 150 Interlace off 300 80 x 103 Smear (see Note 14) See Note 15 Interlace off TA = 21°C TC277-30 Dark signal (see Note 16) Pixel uniformity Output signal = 50 mV ±10 mV Column uniformity Output signal = 50 mV ±10 mV Shading Output signal = 100 mV UNIT mV/lx 30 Interlace on Image-area well capacity Dark current MAX 242 Measured at VU (see Notes 10 and 11) With IR filter TYP electrons 0.0004 nA/cm2 0.027 6.6 TC277-40 7.2 TC277-30 3.5 TC277-40 5 TC277-30 0.5 TC277-40 0.7 mV mV mV 15% NOTES: 10. 11. 12. 13. 14. Sensitivity is measured at an integration time of 20.03 ms with a source temperature of 2856 K. A CM-500 filter is used. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 15. Exposure time is 20 ms and the fast-dump clocking rate during vertical timing is 3.34 MHz. 16. Dark-signal level is measured from the dummy pixels. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 PARAMETER MEASUREMENT INFORMATION Blooming Point With Antiblooming Enabled VO Blooming Point With Antiblooming Disabled Dependent on Well Capacity Vsat (min) Level Dependent Upon Antiblooming Gate High Level Vuse (max) Vuse (typ) DR Vn Lux (light input) DR (dynamic range) voltage + camera white-clip V n Vn = noise-floor voltage Vsat (min) = minimum saturation voltage Vuse (max) = maximum usable voltage Vuse (typ) = typical user voltage (camera white clip) NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max). B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ), the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. Figure 8. Typical Vsat, Vuse Relationship POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 PARAMETER MEASUREMENT INFORMATION 100% VIH min 90% Intermediate Level 10% VIL max 0% tr tf Slew rate between 10% and 90% = 70 to 120 V/µs, tr = 150 ns, tf = 90 ns Duty Cycle @ 2 MHz (13.375 MHz/7): 4:3 @ 3.3 MHz (13.375 MHz/4): 1:1 Figure 9. Typical Clock Waveform for ABG, IAG, and SAG VIH min 100% 90% 10% VIL max 0% tr tf Slew rate between 10% and 90% = 300 V/µs, tr = tf = 15 ns Duty Cycle: 1:2 Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG 1.5 V to 2.5 V SRG –9V – 9 V to – 11 V 0% OUT 90% 100% CCD Delay τ 10 ns 15 ns Sample and Hold Figure 11. SRG and CCD Output Waveforms 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 TYPICAL CHARACTERISTICS CCD SPECTRAL RESPONSIVITY 1 Responsivity – A/W 60 50 40 30 20 10 0.1 5 3 2 0.01 Quantum Efficiency – % 100 VDD = 12 V, TA = 25°C No IR Filter Light Power = 1.5 µW/cm2 Light Box: Canon SA702 0.001 300 400 500 600 700 800 900 1000 1100 Incident Wavelength – nm Figure 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 APPLICATION INFORMATION V ADB VABG+ DC VOLTAGES VSS ADB VCC VSS V ABLVL IALVL VABG + VABG – TMS3473B Parallel Driver 22 kΩ 20 VSS 19 IASR 47 kΩ 18 ABSR 17 VCC ABLVL 16 ABLVL 15 IAOUT 14 ABOUT 13 SAOUT 12 VCC 11 VABG– VABG– SN28846 Serial Driver 1 2 3 4 TL1593 1 4.7 µF ANLGVCC S/H1 2 + ‡ AIN1 S/H2 100 Ω 3 4.7 µF CIN1 S/H3 + ‡ 4 DIGVCC AIN2 100 Ω 5 4.7 µF OUT1 CIN2 6 + ‡ OUT2 AIN3 100 Ω 7 OUT3 CIN3 + 8 DGTLGND ANLGGND 4.7 µF 5 6 7 8 9 10 20 19 18 SH1 17 SH2/GT3 16 15 SH3/GT1 14 13 GND GT2 VCR HCR NC GT1/SH3 NC NC GT3/SH2 SH1 CLK SN28837 ABIN VD SCBLK GT PS IDP NC HGATE S3 TESTA FI S1 T SFI TESTB S2 NC 32 31 BF TESTC 34 33 CSYNC CBLK VCC PI VDS 35 CP2 NCVGATE E/L 37 36 X1 GND ABS0 38 CP1 ABS2 ABS1 40 39 BCP2 VCC 42 41 BCP1 X2 GPS HIGH 43 GP 13.37 MHz VCC VCC1 LSW PD 11 45 44 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 VCC Figure 13. Typical Application Circuit Diagram † Decoupling capacitors are not shown. ‡ TI recommends designing AC coupled systems. 16 OUT1 OUT2 OUT3 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 12 NC 1 SEL1OUT VSS 2 GND SEL1 3 PD NC 4 SRG3IN VCC 5 SRG2IN SRG3OUT 6 SRG1IN SRG2OUT 7 TRGIN SRG1OUT 8 NC TRGOUT 9 SEL2OUT VCC 10 VSS SEL2 TC277 20 SUB SUB 19 IAG IAG 18 ABG ABG 17 SAG TDB 16 IDB OUT3 15 SRG3 OUT2 14 SRG2 OUT1 13 SRG1 AMP GND 12 TRG ADB 11 CDB SUB CLK13M 1 IALVL 2 I/N 3 IAIN 4 ABIN 5 MIDSEL 6 SAIN 7 PD 8 GND 9 V 10 ABG+ VSS SB VD2 IALVL 12 V 5V – 10 V 2V –3 V –5 V 4V – 7V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 15 14 13 12 11 10 9 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 APPLICATION INFORMATION SUPPORT CIRCUITS DEVICE PACKAGE APPLICATION FUNCTION SN28837FS 60 pin flatpack Timing generator PAL timing SN28846DW 20 pin small outline Serial driver Driver for TRG, SRG1, SRG2, SRG3 TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG, and ABG TL1593CNS 16 pin SO (EIAJ) Sample and hold Three-channel sample and hold Figure 13. Typical Application Circuit Diagram (Continued) POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 TC277 735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 MECHANICAL DATA The package for the TC277 consists of a ceramic base, a glass window, and a 20-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings. TC277 (20 pin) Index Mark 7,60 (0.299) 7,20 (0.283) Rotation ± 90° 1,91 (0.075) 1,65 (0.065) 6,50 (0.256) 6,10 (0.240) 18,30 (0.720) MAX Optical Center 15,64 (0.616) 15,44 (0.608) Package Center 15,14 (0.596) 14,84(0.584) 1,78 (0.070) 0,76 (0.030) 0,51 (0.020) 0,41 (0.016) 5,50 (0.217) 3,90 (0.154) 13,87 (0.546) 13,67 (0.538) 3,38 (0.133) 2,72 (0.107) Focus Plane 4,01 (0.158) MAX 1,70 (0.067) 1,10 (0.043) 0,33 (0.013) 0,17 (0.007) 15,54 (0.612) 14,94 (0.588) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES 7/94 NOTES: A. The center of the package and the center of image area not coincident. B. The distance from the top of the glass to the image-sensor surface is typically 1 mm (0.04 in). The glass is 0.95 ± 0.08 mm thick and has an index of refraction of 1.53. C. Each pin centerline is located within 0.18 mm of its true longitudinal position. D. Maximum rotation of the sensor within the package is 1.5°. 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright 1998, Texas Instruments Incorporated