CHENMKO ENTERPRISE CO.,LTD CHM3055LXPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. (SC-62/SOT-89 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 0.8MIN. CONSTRUCTION * N-Channel Enhancement +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Gate D (3) CIRCUIT 4.6MAX. 1.7MAX. 2 3 2 Drain 3 Source (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-62/SOT-89 TA = 25°C unless otherwise noted Parameter CHM3055LXPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 3.7 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 25 3000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 42 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-01 RATING CHARACTERISTIC CURVES ( CHM3055LXPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 2 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 VGS=10V, ID=3.9A 68 100 VGS=4.5V, ID=3.7A 90 120 3 VDS =5V, ID = 3.7A mΩ S 6 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 13 VDS=48V, ID=3.7A 17 nC 2.6 VGS=10V 3.2 V DD= 25V 15 20 I D = 1.0A , VGS = 10 V 18 20 RGEN= 6 Ω 40 50 16 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.5A , VGS = 0 V (Note 1) (Note 2) 2.5 A 1.5 V RATING CHARACTERISTIC CURVES ( CHM3055LXPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 25 10 V G S =1 0 V I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 8.0V 6.0V 20 VG S =5 . 0 V 15 10 VG S =4 . 0 V 5 VG S =3 . 0 V 8 TJ=-55°C 6 4 TJ=125°C 2 TJ=25°C 0 0 0 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 R DS(on) , NORMALIZED 6 4 2 0 4 8 Qg , TOTAL GATE CHARGE (nC) 12 16 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 THRESHOLD VOLTAGE 4.0 5.0 6.0 VGS=10V ID=3.9A 1.9 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=48V ID=3.7A 0 Vth , NORMALIZED GATE-SOURCE 3.0 Figure 4. On-Resistance Variation with Temperature 2.2 8 1.3 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200