CET CEM8938

CEM8938
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.5V.
-30V, -6A, RDS(ON) = 38mΩ @VGS = -10V.
RDS(ON) = 57mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
D1
D1
D2
D2
8
7
6
5
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
S1
G1
S2
G2
TA = 25 C unless otherwise noted
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
Units
V
Gate-Source Voltage
VGS
±20
±20
V
ID
7
-6
A
IDM
20
-20
A
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
2005.March
http://www.cetsemi.com
5 - 186
CEM8938
N-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 24V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 7A
1
21
26
mΩ
VGS = 4.5V, ID = 6A
30
38
mΩ
VDS = 5V, ID = 7A
15
S
750
pF
375
pF
110
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
15
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
30
ns
14
28
ns
94
150
ns
Turn-Off Fall Time
tf
39
60
ns
Total Gate Charge
Qg
21
27
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15V, ID = 7A,
VGS = 10V
2.6
nC
4.4
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 187
1.3
A
1.2
V
5
CEM8938
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-30
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -24V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -5A
-1
30
38
mΩ
VGS = -4.5V, ID = -4A
44
57
mΩ
VDS = -5V, ID = -5A
10
S
1300
pF
300
pF
150
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
10
20
ns
4
10
ns
58
80
ns
Turn-Off Fall Time
tf
23
30
ns
Total Gate Charge
Qg
20
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -15V, ID = -5A,
VGS = -10V
3
nC
5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 188
-1.3
A
-1.2
V
CEM8938
N-CHANNEL
20
25
VGS=3.5V
16
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,6,4.5,4V
12
8
VGS=3.0V
4
20
5
15
10
25 C
5
-55 C
TJ=125 C
0
0.0
0
0.5
1.0
1.5
2.0
0
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
Ciss
600
400
Coss
200
Crss
0
10
15
20
25
30
2.2
1.9
ID=7A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
5
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
4
Figure 1. Output Characteristics
800
1.2
3
VGS, Gate-to-Source Voltage (V)
1000
1.3
2
VDS, Drain-to-Source Voltage (V)
1200
0
1
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 189
CEM8938
P-CHANNEL
30
15
25 C
-VGS=5.0V
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=10,6.0V
24
-VGS=4.5V
18
-VGS=4.0V
12
-VGS=3.5V
6
12
9
6
-55 C
TJ=125 C
3
-VGS=3.0V
0
0
1
2
3
4
5
0
1.0
6
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
900
600
Coss
300
Crss
0
5
10
15
20
25
30
3.0
4.5
2.2
1.9
ID=-5A
VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
3.5
Figure 8. Transfer Characteristics
1200
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
3.0
Figure 7. Output Characteristics
Ciss
1.2
2.5
-VGS, Gate-to-Source Voltage (V)
1500
1.3
2.0
-VDS, Drain-to-Source Voltage (V)
1800
0
1.5
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5 - 190
CEM8938
10
10 V =15V
DS
ID=7A
8
6
4
2
0
10
10
10
10
0
6
12
18
24
1ms
10ms
100ms
1s
DC
0
-2
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
VDS, Drain-Source Voltage (V)
Figure 13. Gate Charge
Figure 14. Maximum Safe
Operating Area
10
10 V =-15V
DS
ID=-5A
10
2
2
RDS(ON)Limit
8
6
4
2
0
10
10
10
10
5
5
-1
Qg, Total Gate Charge (nC)
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
1
10
P-CHANNEL
0
2
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
N-CHANNEL
10
15
20
1
1ms
10ms
100ms
1s
DC
0
-1
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
5 - 191
10
2
CEM8938
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 18. Switching Waveforms
Figure 17. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
5 - 192
10
1
10
2