CEM8938 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Units V Gate-Source Voltage VGS ±20 ±20 V ID 7 -6 A IDM 20 -20 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2005.March http://www.cetsemi.com 5 - 186 CEM8938 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 24V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 7A 1 21 26 mΩ VGS = 4.5V, ID = 6A 30 38 mΩ VDS = 5V, ID = 7A 15 S 750 pF 375 pF 110 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 15 VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 30 ns 14 28 ns 94 150 ns Turn-Off Fall Time tf 39 60 ns Total Gate Charge Qg 21 27 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 7A, VGS = 10V 2.6 nC 4.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 187 1.3 A 1.2 V 5 CEM8938 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -24V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -5A -1 30 38 mΩ VGS = -4.5V, ID = -4A 44 57 mΩ VDS = -5V, ID = -5A 10 S 1300 pF 300 pF 150 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 10 20 ns 4 10 ns 58 80 ns Turn-Off Fall Time tf 23 30 ns Total Gate Charge Qg 20 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -5A, VGS = -10V 3 nC 5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 188 -1.3 A -1.2 V CEM8938 N-CHANNEL 20 25 VGS=3.5V 16 ID, Drain Current (A) ID, Drain Current (A) VGS=10,6,4.5,4V 12 8 VGS=3.0V 4 20 5 15 10 25 C 5 -55 C TJ=125 C 0 0.0 0 0.5 1.0 1.5 2.0 0 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) Ciss 600 400 Coss 200 Crss 0 10 15 20 25 30 2.2 1.9 ID=7A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 5 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 Figure 1. Output Characteristics 800 1.2 3 VGS, Gate-to-Source Voltage (V) 1000 1.3 2 VDS, Drain-to-Source Voltage (V) 1200 0 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 189 CEM8938 P-CHANNEL 30 15 25 C -VGS=5.0V -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,6.0V 24 -VGS=4.5V 18 -VGS=4.0V 12 -VGS=3.5V 6 12 9 6 -55 C TJ=125 C 3 -VGS=3.0V 0 0 1 2 3 4 5 0 1.0 6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 900 600 Coss 300 Crss 0 5 10 15 20 25 30 3.0 4.5 2.2 1.9 ID=-5A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 3.5 Figure 8. Transfer Characteristics 1200 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3.0 Figure 7. Output Characteristics Ciss 1.2 2.5 -VGS, Gate-to-Source Voltage (V) 1500 1.3 2.0 -VDS, Drain-to-Source Voltage (V) 1800 0 1.5 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 - 190 CEM8938 10 10 V =15V DS ID=7A 8 6 4 2 0 10 10 10 10 0 6 12 18 24 1ms 10ms 100ms 1s DC 0 -2 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 VDS, Drain-Source Voltage (V) Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 10 10 V =-15V DS ID=-5A 10 2 2 RDS(ON)Limit 8 6 4 2 0 10 10 10 10 5 5 -1 Qg, Total Gate Charge (nC) -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 10 P-CHANNEL 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 10 15 20 1 1ms 10ms 100ms 1s DC 0 -1 -2 10 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 5 - 191 10 2 CEM8938 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms Figure 17. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 5 - 192 10 1 10 2