CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts CHM9939AJPT CURRENT 7 Ampere CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel & P-Channel Enhancement in the package .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) SO-8 Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) TA = 25°C unless otherwise noted Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage ±20 ±20 V 7.0 -3.5 30 -14 Maximum Drain Current - Continuous ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM9939AJPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 VGS=10V, ID=7A 24 30 VGS=4.5V, ID=3.5A 32 42 VDS =15V, ID = 7A 10 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=15V, ID=2A VGS=10V 20 24 nC 3 6 V DD= 25V 16 24 I D = 1.0A , VGS = 10 V 7 14 RGEN= 6 Ω 47 60 10 15 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 2.0A , VGS = 0 V (Note 2) (Note 1) 2.3 A 1.1 V RATING CHARACTERISTIC CURVES ( CHM9939AJPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-3.5A 60 100 VGS=-4.5V, ID=-2A 110 160 VDS = -15V, ID = -3.5A 3 4.5 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-10V, ID=-3.5A VGS=-10V 16 21 nC 2 4.5 V DD= -15V 20 28 I D = -1.0A , VGS = -10 V 7 14 RGEN= 6 Ω 37 50 23 32 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.7A , VGS = 0 V (Note 2) (Note 1) -1.7 A -1.2 V