CHENMKO ENTERPRISE CO.,LTD CHT2000ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 200 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 7.0+0.3 3.00+0.10 CONSTRUCTION 0.70+0.10 MARKING 0.9+0.2 2.0+0.3 * NPN SILICON Transistor 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 ZMN 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E(2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − collector-emitter voltage open base − 200 200 V VCEO VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 600 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT2000ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 180 V − 500 nA IEBO emitter cut-off current VEB=10V − 100 nA hFE DC current gain IC = 100uA; V CE = 5V IC = 10mA; VCE = 5V 3000 − 3000 − IC = 160mA; VCE =5V 3000 − IC = 20 mA; IB =25uA − 0.9 IC =-80 mA; IB = 40uA − − 1.1 V 1.2 V − 2.0 V VCEsat collector-emitter saturation voltage IC =160mA; IB =100uA VBEON base-emitter saturation voltage VCE=5V,IC=160mA V