CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) CHUMF23PT Tr1:VOLTAGE 50 Volts CURRENT 150 mAmpere DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Power management circuit FEATURE * Small surface mounting type. (SC-88/SOT-363) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SA1774 & CHDTC114E in one package. * Built in bias resistor(R1=10kΩ, Typ. ) SC-88/SOT-363 (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 R1 Tr1 2.15~2.45 R2 DTr2 1 3 SC-88/SOT-363 Dimensions in millimeters 2SA1774 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO Collector-base voltage − -60 V VCEO Collector-emitter voltage − -50 V VEBO Emitter-base voltage − -6 V DC Output current − -150 mA − 150 mW +150 IC NOTE.1 PC Total power dissipation TSTG Storage temperature −55 TJ Junction temperature − Note 1. 120mW per element must not be exceeded. 150 O C O C CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 50 NOTE.1 − 100 NOTE.2 − 150 mW IO DC Output current IC(Max.) mA PC Power dissipation TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C Note 1. Characteristics of built-in transistor. 2. 120mW per element must not be exceeded. Each terminal mounter on a recommended land. 2SA1774 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL CONDITIONS MIN. BVCEO Collector-emitter breakdown voltage IC=-50uA -60 − − V BVCBO Collector-base breakdown voltage IC=-1mA -50 − − V IE=-50uA -6 − V VCB=-60V − − − -100 nA VEB=-6V − − 180 − -100 390 nA VCE=-6V,IC=-1mA − − − -500 mV 5 pF MHz BVEBO PARAMETER Emitter-base breakdown voltage ICBO Collector cut-off current IEBO Emitter cut-off current DC current gain hFE VCE(sat) Cob fT Collector-emitter saturation voltage Collector output capacitance Transition frequency IC=-50mA,IB=-5mA VCB=-12V,IE=0mA,f=1MHZ TYP. 4 − VCE=-12V,IE=2mA,f=100MHZ MAX. 140 − UNIT − Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=10mA; VO=0.3V − − 3.0 V V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 II Input current VI=5V − − 0.88 IC(off) Output current VI=0V; VCC=50V − − 0.5 G1 DC current gain IO=5mA; VO=5.0V 30 − − − R1 Input resistor 13 KΩ R2/R1 fT Resistor ratio Transition frequency 1.0 1.2 − 250 − MHz Note Pulse test: tp≤300uS; δ≤0.02. 7 0.8 IE=-5mA, VCE=10.0V f=100MHz = − 10 mA uA RATING CHARACTERISTIC CURVES ( CHUMF23PT ) 2SA1774 Typical Electrical Characteristics −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −28.0 −24.5 −21.0 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.4 −0.8 −1.2 500 Ta=100˚C 25˚C −0.2 −0.1 Ta=100˚C 25˚C −40˚C −40˚C 200 100 50 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) −0.2 −0.5 −1 −2 −80 −60 VCE=−6V −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Grounded emitter output characteristics (2) Ta=25˚C −500 −450 −400 −350 −300 −250 −200 −150 −40 −100 −20 IB=0 −1.6 −2.0 −50µA IB=0 −1 0 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.5 DC current gain vs. collector current lC/lB=10 −0.5 −100 COLLECTOR TO MITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −31.5 −6 Fig.4 Collector-emitter saturation voltage vs. collector current −1 Fig.3 −35.0 Ta=25˚C −8 0 BASE TO EMITTER VOLTAGE : VBE (V) Grounded emitter output characteristics (1) COLLECTOR CURRENT : IC (mA) −10 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 −20 Fig.2 Grounded emitter propagation characteristics Fig. 6 Gain bandwidth product vs. emitter current 1000 TRANSITION FREQUENCY : fT (MHz) Fig.1 Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) 50 100 RATING CHARACTERISTIC CURVES ( CHUMF23PT ) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta =- 40OC O 25 = C 100OC 5 2 1 500m 200m 100m 100 200 500 1m 2m 2m 1m 500 VCC=5V Ta=100OC 25OC -40 OC 200 100 50 20 10 5 2 1 5m 10m 20m 50m 100m 0 0.5 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1k 2.5 3.0 lO/lI=20 500m Ta=100 C 25OC -40OC 100 50 20 10 5 2 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 2.0 1 VO =5V O 1 100 200 1.5 Fig.4 Output voltage vs. output current 500 200 1.0 INPUT VOLTAGE : VI(off) (V) Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A)