CHENMKO CHEMZ7PT

CHENMKO ENTERPRISE CO.,LTD
CHEMZ7PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 15 Volts
CURRENT 500 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA)
* Low cob. Cob=7.5pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(5)
* Both the 2SC5585 & 2SA2018 in one package.
0.50
0.9~1.1
* NPN / PNP Silicon Transistor
1.5~1.7
0.50
(4)
(3)
0.15~0.3
MARKING
1.1~1.3
* Z7
0.5~0.6
0.09~0.18
CIRCUIT
6
4
1
3
1.5~1.7
SOT-563
Dimensions in millimeters
2SC5585 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
15
V
VCEO
Collector-emitter voltage
−
12
V
VEBO
Emitter-base voltage
−
6
V
−
500
NOTE.1
−
1000
NOTE.2
−
150
+150
IC
DC Output current
Icp
PC
Total power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
Note
1. Single pulse Pw=1ms
2. 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
150
mA
mW
O
C
O
C
2004-07
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
-15
V
VCEO
Collector-emitter voltage
−
-12
V
VEBO
Emitter-base voltage
−
-6
V
−
-500
−
-1000
−
150
+150
IC
DC Output current
ICP
Pc
NOTE.1
power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
mA
mW
O
C
O
150
C
Note
1. Single Pulse Pw=1ms
2SC5585 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
CONDITIONS
MIN.
BVCEO Collector-emitter breakdown voltage
IC=1mA
12
−
−
V
BVCBO Collector-base breakdown voltage
IC=10uA
15
−
−
V
IE=10uA
6
−
BVEBO
ICBO
IEBO
hFE
VCE(sat)
PARAMETER
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Cob
Collector output capacitance
fT
Transition frequency
TYP.
VCB=15V
−
−
−
VEB=6V
−
VCE=2V,IC=10mA
IC=200mA,IB=10mA
MAX.
UNIT
V
100
nA
−
100
nA
270
−
680
−
90
250
mV
VCB=10V,IE=0mA,f=1MHZ
−
−
7.5
−
VCE=2V,IE=-10mA,f=100MHZ
−
320
−
pF
MHz
MIN.
TYP.
2SA2018 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
BVCEO Collector-emitter breakdown voltage
IC=-1mA
-12
−
−
V
BVCBO Collector-base breakdown voltage
IC=-10uA
-15
−
−
V
BVEBO
Emitter-base breakdown voltage
IE=-10uA
-6
−
V
ICBO
Collector cut-off current
VCB=-15V
−
−
−
IEBO
Emitter cut-off current
DC current gain
VEB=-6V
−
−
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
270
hFE
VCE(sat)
Cob
fT
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCB=-10V,IE=0mA,f=1MHZ
VCE=-2V,IE=10mA,f=100MHZ
−
−
−
−
-100
6.5
260
-100
nA
-100
680
nA
-250
mV
−
pF
MHz
−
−
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SC5585 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
VCE=2V
pulsed
O
DC CURRENT GAIN : hFE
25 C
100
Ta=25 C
O
O
O
Ta=-40 C
10
1
O
-40 C
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
1000
O
Ta=25 C
pulsed
100
O
Ta=125 C
O
Ta=25 C
10
O
Ta=-40 C
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
10
100
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
VCE=2V
pulsed
Ta=125 C
O
Ta=125 C
COLLECTOR CURRENT : IC(mA)
1000
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
IC/IB=20
pulsed
100
O
Ta=125O C
Ta=25 C
O
Ta=-40 C
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SC5585 Typical Electrical Characteristics
1000
1000
IC/IB=20
pulsed
Ta=-40OOC
Ta=25 C
O
Ta=125 C
100
10
1
1
10
100
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC(mA)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
Fig.6 Gain bandwidth product vs.
collector current
TRANSITION FREQUENCY : fT(MHZ)
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.5 Base-emitter saturation voltage
vs. collector current
IE=0A
f=1MHOZ
Ta=25 C
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
VCE=2V
O
Ta=25 C
pulsed
100
10
1
1
10
100
EMITTER CURRENT : IE(mA)
1000
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SA2018 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
VCE=2V
pulsed
O
O
DC CURRENT GAIN : hFE
100
Ta=25 C
O
O
Ta=-40 C
10
1
O
O
-40 C
100
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1.4
1000
O
Ta=25 C
pulsed
100
O
Ta=125 C
O
Ta=25 C
10
O
Ta=-40 C
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
10
100
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
VCE=2V
pulsed
Ta=125 C
25 C
Ta=125 C
COLLECTOR CURRENT : IC(mA)
1000
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
IC/IB=20
pulsed
100
O
Ta=125O C
Ta=25 C
O
Ta=-40 C
10
1
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SA2018 Typical Electrical Characteristics
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
1000
IC/IB=20
pulsed
Ta=-40OOC
Ta=25 C
O
Ta=125 C
100
10
1
1
10
100
1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.6 Gain bandwidth product vs.
collector current
TRANSITION FREQUENCY : fT(MHZ)
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHOZ
Ta=25 C
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
VCE=2V
O
Ta=25 C
pulsed
100
10
1
1
10
100
EMITTER CURRENT : IE(mA)
1000