CHENMKO ENTERPRISE CO.,LTD CHT4413UPNPT SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 40 Volts CURRENT 600 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 CONSTRUCTION * PNP and NPN transistors in one package. 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT C1 B2 E2 6 5 4 2.15~2.45 TR2 TR1 1 2 3 E1 B1 C2 SC-88/SOT-363 Dimensions in millimeters TR1 CHT4401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 600 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2004-8 TR2 CHT4403 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V VEBO emitter-base voltage open collector − -5 V IC collector current (DC) − -600 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C MAX. UNIT Tamb ≤ 25 °C; note 2 Note 2. Transistor mounted on an FR4 printed-circuit board. TR1 CHT4401 CHARACTERISTICS Tamb = 25 °C unless otherwise speciped. SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO collector-base breakdown voltage 60 40 V collector-emitter breakdown voltage IC = 100uA ; IE = 0A IC = 1mA ; IB = 0A − V(BR)CEO − V V(BR)EBO emitter-base breakdown voltage IE = 100uA ; IC = 0A 6 − V ICEX collector cut-off current IBL base cut-off current VEB(OFF) = 0.4V ; VCE = 35 V VEB(OFF) = 0.4V ; VCE = 35 V − − 100 100 nA nA IC = 100uA; VCE =I 1V 20 IC = 1 mA; VCE = 1V IC = 10 mA; VCE = 1V IC = 150 mA; VCE = 1V − − IC = 500 mA; VCE = 2V 40 80 100 40 hFE DC current gain − 300 − VCEsat collector-emitter saturation IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA − − 400 750 mV mV VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA 750 − 950 1200 mV mV Ccb VCB=5.0V; f=1.0MHZ; IE=0 − − 1.0 0.1 6.5 30 15 8.0 pF pF KΩ hre hfe hoe output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance 40 1.0 500 30 µS fT transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 250 − MHz td tr delay time rise time VCC=30V; IC=150mA VBE(off)=2.0V; IB1=15mA ts storage time tf fall time VCC=30V; IC=150mA IB1=IB2=15mA − − − − 15 20 225 30 nS nS nS nS Ceb hie VEB=0.5V; f=1.0MHZ; IC=0 VCE=10V; f=1.0KHZ; IC=1.0mA x10 -4 TR2 CHT4403 CHARACTERISTICS Tamb = 25 °C unless otherwise speciped. SYMBOL PARAMETER CONDITIONS UNIT -40 -40 − V IE = -100uA ; IC = 0A -6 − V VEB(OFF) = -0.4V ; VCE = -35 V VEB(OFF) = -0.4V ; VCE = -35 V − − -100 -100 nA nA IC = -100uA; VCE = -1V 30 IC = -1 mA; VCE = -1V IC = -10 mA; VCE = -1V IC = -150 mA; VCE = -2V IC = -500 mA; VCE = -2V 60 100 100 20 − − V(BR)CEO collector-emitter breakdown voltage IC = -100uA ; IE = 0A IC = -1mA ; IB = 0A V(BR)EBO emitter-base breakdown voltage ICEX collector cut-off current IBL base cut-off current DC current gain MAX. V collector-base breakdown voltage hFE MIN. − V(BR)CBO − 300 − VCEsat collector-emitter saturation IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA − − -400 -750 mV mV VBEsat base-emitter saturation voltage IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA -750 − -950 -1300 mV mV Ccb VCB=-10V; f=1.0MHZ; IE=0 − − 1.5 0.1 8.5 30 15 8.0 pF pF KΩ hre hfe hoe output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance 60 1.0 500 100 µS fT transition frequency IC = -20 mA; VCE = - 10 V f = 100 MHz 200 − MHz td tr delay time rise time VCC=-30V; IC=-150mA VBE(off)=-2.0V; IB1=-15mA ts storage time tf fall time VCC=-30V; IC=-150mA IB1=IB2=-15mA − − − − 15 20 225 30 nS nS nS nS Ceb hie VEB=-0.5V; f=1.0MHZ; IC=0 VCE=-10V; f=1.0KHZ; IC=-1.0mA x10 -4 RATING CHARACTERISTIC CURVES ( CHT4413UPNPT ) 1K V CE = 1V 25 °C 100 10 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Typical Capacitance CAPACITANCE (pF) 30 f = 1MHz 20 C ibo 10 5.0 Cobo 1.0 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical DC Current Gain vs Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN TR1 CHT4401 Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 IC /I B =10 0.4 0.3 0.2 25 °C 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0.1 V CE = 5V - 50 °C 25 °C 125 °C 1 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CHT4413UPNPT ) 1K V CE = 1V 25 °C 100 10 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Typical Capacitance CAPACITANCE (pF) 30 f = 1MHz 20 C ibo 10 5.0 Cobo 1.0 -0.1 -1 -10 REVERSE BIAS VOLTAGE (V) -50 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical DC Current Gain vs Collector Current V BE(ON) - BASE-EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN TR1 CHT4403 Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 IC /I B =10 0.4 0.3 0.2 25 °C 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 V CE = 5V - 50 °C 25 °C 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100