NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A – 61A – 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCER Collector-Emitter Voltage VBE = 0 VEBO Emitter-Base Voltage IC IC Collector Current ICM IB Base Current Ptot TJ TStg Value BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A @ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature range Unit 60 80 90 45 60 80 V V 5 V 1 A 2 0.1 5 0.8 200 -65 to +150 A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS Value Unit 35 220 K/ W K/ W 1/3 NPN BSS50A-51A-52A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IE= 0 ;VCB= 45V IE= 0 ;VCB= 60V IE= 0 ;VCB= 80V IEB0 Emitter Cutoff Current IC= 0 ;VEB=4 V VCE(SAT) VBE(SAT) Collector-Emitter saturation Voltage Base-Emitter saturation Voltage IC=500 mA , IB=0.5 mA IC=500 mA , IB=0.5 mA, Tj=200°C IC=1 A, IB=1 mA BSS51A IC=1 A, IB=1 mA , Tj=200°C IC=1 A, IB=4 mA BSS50A IC=1 A, IB=4 mA , Tj=200°C BSS52A IC=500 mA , IB=0.5 mA IC=1 A, IB=1 mA BSS51A IC=1 A, IB=4 mA IC=150 mA , VCE=10 V hFE DC Current Gain IC=500 mA , VCE=10 V hfe ton toff ton toff BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A Small Signal Current Gain IC=500 mA , VCE=5 V f = 35 MHz Switching times ICon=500 mA IB1=-IB2=0.5 mA Switching times ICon=1 mA IB1=-IB2=1 mA COMSET SEMICONDUCTORS BSS50A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A BSS50A BSS51A BSS52A Min Typ Mx Unit - - 50 nA - - 700 µA - - 1.3 1.3 1.6 2.3 1.6 1.6 1.9 2.2 - - 2.2 800 - - V 2000 - - - 10 - - 0.4 1.5 0.4 1.5 - 2/3 µs µs NPN BSS50A-51A-52A MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L Pin 1 : Pin 2 : Case : 12.7 5.08 45° typ max - 0.49 6.6 8.5 9.4 1.2 0.9 - Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3