PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCBO Collector-Base Voltage IE = 0 -VCEO Collector-Emitter Voltage IB = 0 -VEBO Emitter-Base Voltage IC = 0 -IC Collector Current 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25° @ Tamb= < 25° Ptot TJ TStg Value Junction Temperature Storage Temperature range Unit 60 80 60 80 60 80 60 80 V V 5 V 1 A 4 0.8 200 -65 to +200 Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS Value Unit 44 218 K/ W K/ W 1/3 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO Ratings Test Condition(s) Collector – Cutoff Current IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V -VCB0 Collector – Base Breakdown -IC = 10 µA IE = 0 Voltage -VCE0 (*) Collector – Emitter Breakdown Voltage -IC = 10 mA -VEB0 Emitter – Base Breakdown Voltage -IE = 10 µA IC = 0 Collector-Emitter Saturation Voltage -IC = 150 mA , -IB = 15 mA -IC = 500 mA , -IB = 50 mA -IC = 1 A, -IB = 100 mA Base-Emitter Saturation Voltage -IC = 150 mA , -IB = 15 mA -IC = 500 mA , -IB = 50 mA -IC = 1 A, -IB = 100 mA -VCE(SAT) (*) -VBE (*) IB = 0 -IC = 100 µA , -VCE = 5 V -IC = 100 mA , -VCE = 5V hFE (*) DC Current Gain -IC = 500 mA , -VCE = 5V -IC = 1 A , -VCE = 5 V -IC = 100 mA , -VCE = 5V Tamb = -55°c COMSET SEMICONDUCTORS 2N4030 2N4031 2N4030 2N4031 2N4032 2N4033 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4032 2N4030 2N4032 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 Min Typ Mx Unit - - 50 nA - - 50 µA - - 50 nA - - 50 µA 60 80 60 80 60 80 60 80 - - 5 - - - - 0.15 0.5 - - 1 - - 0.9 1.1 - - 1.2 30 - - 75 - - 40 - 120 100 - 300 25 - - V V V V 70 - - 15 10 40 25 - - 15 - - 40 - 2/3 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 Symbol fT Ratings Min Test Condition(s) -IC = 50 mA , -VCE = 10 V f = 100 MHZ Transition Frequency CEBO Emitter – base Capacitance CCBO Collector – base Capacitance tS Storage times tf Fall times ton Turn-on times 2N4030 2N4031 2N4032 2N4033 IC = 0 ; -VEB = 0.5 V f = 1 MHZ IE = 0 ; -VCB = 10V f = 1 MHZ -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA Typ Mix Unit 100 - 400 150 - 500 - - 110 pF - - 20 pF - - 350 ns - - 50 ns - - 100 ns MHZ (*) Pulsed : pulse duration = 300µs, duty cycle = 1% MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L Pin 1 : Pin 2 : Case : 12.7 5.08 45° typ max - 0.49 6.6 8.5 9.4 1.2 0.9 - Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3