DCCOM TIP117

DC COMPONENTS CO., LTD.
TIP117
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and
low-speed switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.405(10.28)
.380(9.66)
Absolute Maximum Ratings(TA=25oC)
Characteristic
.295(7.49)
.220(5.58)
Symbol
Rating
Unit
VCBO
-100
V
Collector-Base Voltage
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
-5
V
IC
-4
A
Collector Current (continuous)
Collector Current (peak)
-100
IC
-6
A
PD
50
W
Total Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
o
-55 to +150
o
Storage Temperature
TSTG
.350(8.90)
.330(8.38)
.640
Typ
(16.25)
1 2 3
V
Total Power Dissipation(TC=25 C)
o
.625(15.87)
.570(14.48)
.562(14.27)
.500(12.70)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
-100
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
-100
-
-
V
IC=-30mA, IB=0
ICBO
-
-
-1
mA
VCB=-100V, IE=0
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
Test Conditions
IC=-1mA, IE=0
ICEO
-
-
-2
mA
VCE=-50V, IB=0
IEBO
-
-
-2
mA
VEB=-5V, IC=0
VCE(sat)
-
-
-2.5
V
IC=-2A, IB=-8mA
VBE(on)
-
-
-2.8
V
IC=-2A, VCE=-4V
hFE1
1K
-
-
-
IC=-1A, VCE=-4V
hFE2
500
-
-
-
Cob
-
-
200
pF
380µs, Duty Cycle
2%
IC=-2A, VCE=-4V
VCE=-10V, f=0.1MHz