DC COMPONENTS CO., LTD. TIP117 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .405(10.28) .380(9.66) Absolute Maximum Ratings(TA=25oC) Characteristic .295(7.49) .220(5.58) Symbol Rating Unit VCBO -100 V Collector-Base Voltage Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO -5 V IC -4 A Collector Current (continuous) Collector Current (peak) -100 IC -6 A PD 50 W Total Power Dissipation PD 2 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 V Total Power Dissipation(TC=25 C) o .625(15.87) .570(14.48) .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -100 - - V Collector-Emitter Breakdown Voltage BVCEO -100 - - V IC=-30mA, IB=0 ICBO - - -1 mA VCB=-100V, IE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) (1) Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=-1mA, IE=0 ICEO - - -2 mA VCE=-50V, IB=0 IEBO - - -2 mA VEB=-5V, IC=0 VCE(sat) - - -2.5 V IC=-2A, IB=-8mA VBE(on) - - -2.8 V IC=-2A, VCE=-4V hFE1 1K - - - IC=-1A, VCE=-4V hFE2 500 - - - Cob - - 200 pF 380µs, Duty Cycle 2% IC=-2A, VCE=-4V VCE=-10V, f=0.1MHz