DC COMPONENTS CO., LTD. R DXT2907A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and high -speed, medium-power switching applications. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Collector-Base Voltage VCBO -60 V VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 1.2 W Junction Temperature TJ +150 o -55 to +150 o TSTG 1 Unit Collector-Emitter Voltage Storage Temperature .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -60 - - V Collector-Emitter Breakdown Voltage BVCEO -60 - - V IC=-10mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -10 nA VCB=-50V Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Test Conditions IC=-10µA ICEX - - -50 nA VCE=-30V, VBE=-0.5V VCE(sat)1 - -0.2 -0.4 mV IC=-150mA, IB=-15mA VCE(sat)2 - -0.5 -1.6 V IC=-500mA, IB=-50mA VBE(sat)1 - - -1.3 V IC=-150mA, IB=-15mA VBE(sat)2 - - -2.6 V IC=-500mA, IB=-50mA hFE1 75 - - - IC=-100µA, VCE=-10V hFE2 100 - - - IC=-1mA, VCE=-10V hFE3 100 - - - IC=-10mA, VCE=-10V hFE4 100 - 300 - IC=-150mA, VCE=-10V hFE5 50 - - - IC=-500mA, VCE=-10V Transition Frequency fT 200 - - MHz Output Capacitance Cob - - 8 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% VCE=-20V, f=100MHz, IC=-50mA VCB=-10V, f=1MHz