DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -5 A Total Power Dissipation PD 2 W Total Power Dissipation(TC=25 C) PD 65 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -60 - - V Collector-Emitter Breakdown Voltage BVCEO -60 - - V IC=-100mA ICBO - - -0.2 mA VCB=-60V ICEO - - -0.5 mA VCE=-30V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) (1) Output Capacitance (1)Pulse Test: Pulse Width IEBO - - -2 mA VCE(sat)1 - - -2 V Test Conditions IC=-1mA VEB=-5V IC=-3A, IB=-12mA VCE(sat)2 - - -4 V IC=-5A, IB=-20mA VBE(on) - - -2.5 V IC=-3A, VCE=-3V hFE1 1K - - - IC=-500mA, VCE=-3V hFE2 1K - - - Cob - - 300 pF 380µs, Duty Cycle 2% IC=-3A, VCE=-3V VCB=-10V, f=0.1MHz