DC COMPONENTS CO., LTD. PN2222 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and highspeed, medium-power switching applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 10 nA VCB=50V, IE=0 Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (1) Test Conditions VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA VCE(sat)2 - - 1.6 V IC=500mA, IB=50mA VBE(sat)1 - - 1.3 V IC=150mA, IB=15mA VBE(sat)2 - - 2.6 V IC=500mA, IB=50mA hFE1 35 - - - IC=0.1mA, VCE=10V hFE2 50 - - - IC=1mA, VCE=10V hFE3 75 - - - IC=10mA, VCE=10V hFE4 100 - 300 - IC=150mA, VCE=10V hFE5 30 - - - fT 250 - - MHz - - 8 pF Cob 380µs, Duty Cycle 2% IC=500mA, VCE=10V IC=20mA, VCE=20V, f=100MHz VCB=10V, f=1MHz, IE=0