DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Total Power Dissipation PD 2 W Total Power Dissipation(TC=25 C) PD 30 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=10mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 0.1 mA VCB=20V, IE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) (1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions ICEO - - 5 mA VCE=60V, IB=0 IEBO - - 1 mA VEB=4V, IC=0 VCE(sat) - - 1 V IC=2A, IB=0.2A VBE(on) - - 1.5 V IC=1A, VCE=2V hFE1 40 - 320 - IC=1A, VCE=2V hFE2 40 - - - IC=0.1A, VCE=2V - 8 - MHz IC=0.5A, VCE=5V fT 380µs, Duty Cycle 2% Classification of hFE1 Rank C D E F Range 40~80 60~120 100~200 160~320