VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V 0.8 to 2.5 0.28 5 @ VGS = 10 V 0.6 to 2.5 0.23 60 VN0610LL VN2222LL FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Solid State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems Low On-Resistance: 2.5 W Low Threshold: <2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage TO-226AA (TO-92) Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffering High-Speed Circuits Low Error Voltage TO-92S Front View VN0610LL S 1 G 2 D 3 S 1 “S” VN0 610LL xxyy G 2 VN2222LL D Front View VN0605T VN10LLS G 1 S 2 V2wll “S” VN 10LLS xxyy 3 Top View “S” VN2 222LL xxyy Top View VN0610LL VN2222LL TO-236 (SOT-23) VN10LLS 3 “S” = Siliconix Logo xxyy = Date Code Top View D V2 = Part Number Code for VN0605T w = Week Code ll = Lot Traceability VN0605T “S” = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage Gate-Source Voltage—Non-Repetitiveb Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C) Pulsed Drain TA= 25_C TA= 100_C Currenta Power Dissipation TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range VN0605T VN0610LL VN2222LL VDS 60 60 60 60 VGSM "30 "30 "30 "30 VGS "20 "20 "20 "20 0.32 0.18 0.28 0.23 0.2 0.11 0.17 0.14 1.4 0.72 1.3 1.0 0.9 0.36 0.8 0.8 0.4 0.14 0.32 0.32 139 350 156 156 ID IDM TA= 25_C VN10LLS PD RthJA TJ, Tstg –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. Document Number: 70212 S-04279—Rev. G, 16-Jul-01 www.vishay.com 11-1 VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN10LLS VN0610LL Parameter Symbol Test Conditions Typa Min VGS = 0 V, ID = 100 mA 70 60 VGS = 0 V, ID = 10 mA 70 VDS = VGS, ID = 1 mA 2.1 Max VN0605T Min VN2222LL Max Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) 60 60 0.8 2.5 0.8 VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS "100 IDSS On-State Drain Currentb ID(on) "100 "100 VDS = 50 V, VGS = 0 V 10 1.0 500 500 nA VDS = 48 V, VGS = 0 V 10 rDS(on) VDS = 10 V, VGS = 10 V 1000 VGS = 4.5 V, ID = 50 mA 4.5 VGS = 5 V, ID = 0.2 A 4.5 7.5 VGS = 10 V, ID = 0.5 A 2.4 5 5 9 10 TJ= 125_C Forward Transconductanceb gfs Common Source Output Conductanceb gos m mA 500 TJ= 125_C Drain-Source On-Resistanceb 2.5 "500 TJ=125_C VDS = 0 V, VGS = "30 V TJ= 125_C Zero Gate-Voltage Drain Current V 0.6 3.0 750 230 VDS = 10 V, ID = 0.2 A 180 VDS = 5 V, ID = 50 mA 500 750 mA 7.5 4.4 VDS = 10 V, ID = 0.5 A 500 7.5 100 7.5 W 13.5 100 mS 80 ms Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 22 60 60 60 11 25 25 25 2 5 5 5 VDD = 15 V, RL = 23 W, ID ^ 0.6 A VGEN = 10 V, RG = 25 W 7 10 10 7 10 10 VDD = 30 V, RL = 150 W, ID ^ 0.2 A VGEN = 10 V, RG = 25 W 7 20 11 20 VDS =25 V, VGS = 0 V f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 VNBF06 Document Number: 70212 S-04279—Rev. G, 16-Jul-01 VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 0.8 6V ID – Drain Current (A) ID – Drain Current (A) TJ = –55_C 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 3.5 V 3V 0 1 2 3 4 5 25_C 0.4 125_C 0.2 2.5 V 2, 1 V 0.0 0.6 0.0 6 0 1 VDS – Drain-to-Source Voltage (V) 2 4 5 6 25 30 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 7 60 VGS = 0 V f = 1 MHz TJ = 25_C 6 50 rDS @ 5 V = VGS 5 C – Capacitance (pF) rDS(on) – On-Resistance ( Ω ) 3 4 3 rDS @ 10 V = VGS 2 40 30 Ciss 20 Coss 10 1 0 0.0 Crss 0 0.2 0.4 0.6 0.8 0 1.0 5 ID – Drain Current (A) Gate Charge 20 10 15 20 VDS – Drain-to-Source Voltage (V) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V, rDS @ 0.5 A 16 rDS(on) – On-Resistance ( Ω ) (Normalized) VGS – Gate-to-Source Voltage (V) VDS = 30 V ID = 0.5 A 12 8 4 0 0 400 800 1200 1600 Qg – Total Gate Charge (pC) Document Number: 70212 S-04279—Rev. G, 16-Jul-01 2000 2400 1.5 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 0.0 –55 –30 –5 20 45 70 95 120 145 TJ – Junction Temperature (_C) www.vishay.com 11-3 VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6 rDS(on) – On-Resistance ( Ω ) IS – Source Current (A) 1.000 TJ = 125_C 0.100 TJ = 25_C 0.010 5 ID = 50 mA 4 500 mA 3 2 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 VSD – Source-to-Drain Voltage (V) 6 8 10 12 14 16 18 20 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.50 ID = 250 mA VGS(th) – Variance (V) 0.25 –0.00 –0.25 –0.50 –0.75 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70212 S-04279—Rev. G, 16-Jul-01