VISHAY VN2222LL

VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID Min (A)
VN10LLS
5 @ VGS = 10 V
0.8 to 2.5
0.32
VN0605T
5 @ VGS = 10 V
0.8 to 3.0
0.18
5 @ VGS = 10 V
0.8 to 2.5
0.28
5 @ VGS = 10 V
0.6 to 2.5
0.23
60
VN0610LL
VN2222LL
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Solid State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
Low On-Resistance: 2.5 W
Low Threshold: <2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output
Leakage
TO-226AA
(TO-92)
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffering
High-Speed Circuits
Low Error Voltage
TO-92S
Front View
VN0610LL
S
1
G
2
D
3
S
1
“S” VN0
610LL
xxyy
G
2
VN2222LL
D
Front View
VN0605T
VN10LLS
G
1
S
2
V2wll
“S” VN
10LLS
xxyy
3
Top View
“S” VN2
222LL
xxyy
Top View
VN0610LL
VN2222LL
TO-236
(SOT-23)
VN10LLS
3
“S” = Siliconix Logo
xxyy = Date Code
Top View
D
V2 = Part Number Code
for VN0605T
w = Week Code
ll = Lot Traceability
VN0605T
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitiveb
Gate-Source Voltage—Continuous
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain
TA= 25_C
TA= 100_C
Currenta
Power Dissipation
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
VN0605T
VN0610LL
VN2222LL
VDS
60
60
60
60
VGSM
"30
"30
"30
"30
VGS
"20
"20
"20
"20
0.32
0.18
0.28
0.23
0.2
0.11
0.17
0.14
1.4
0.72
1.3
1.0
0.9
0.36
0.8
0.8
0.4
0.14
0.32
0.32
139
350
156
156
ID
IDM
TA= 25_C
VN10LLS
PD
RthJA
TJ, Tstg
–55 to 150
Unit
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-1
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN10LLS
VN0610LL
Parameter
Symbol
Test Conditions
Typa
Min
VGS = 0 V, ID = 100 mA
70
60
VGS = 0 V, ID = 10 mA
70
VDS = VGS, ID = 1 mA
2.1
Max
VN0605T
Min
VN2222LL
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate-Threshold Voltage
V(BR)DSS
VGS(th)
60
60
0.8
2.5
0.8
VDS = 0 V, VGS = "20 V
Gate-Body Leakage
IGSS
"100
IDSS
On-State Drain Currentb
ID(on)
"100
"100
VDS = 50 V, VGS = 0 V
10
1.0
500
500
nA
VDS = 48 V, VGS = 0 V
10
rDS(on)
VDS = 10 V, VGS = 10 V
1000
VGS = 4.5 V, ID = 50 mA
4.5
VGS = 5 V, ID = 0.2 A
4.5
7.5
VGS = 10 V, ID = 0.5 A
2.4
5
5
9
10
TJ= 125_C
Forward
Transconductanceb
gfs
Common Source
Output Conductanceb
gos
m
mA
500
TJ= 125_C
Drain-Source
On-Resistanceb
2.5
"500
TJ=125_C
VDS = 0 V, VGS = "30 V
TJ= 125_C
Zero Gate-Voltage
Drain Current
V
0.6
3.0
750
230
VDS = 10 V, ID = 0.2 A
180
VDS = 5 V, ID = 50 mA
500
750
mA
7.5
4.4
VDS = 10 V, ID = 0.5 A
500
7.5
100
7.5
W
13.5
100
mS
80
ms
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
22
60
60
60
11
25
25
25
2
5
5
5
VDD = 15 V, RL = 23 W, ID ^ 0.6 A
VGEN = 10 V, RG = 25 W
7
10
10
7
10
10
VDD = 30 V, RL = 150 W, ID ^ 0.2 A
VGEN = 10 V, RG = 25 W
7
20
11
20
VDS =25 V, VGS = 0 V
f = 1 MHz
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
Turn-On Time
tON
Turn-Off Time
tOFF
ns
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Switching time is essentially independent of operating temperature.
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11-2
VNBF06
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
1.0
1.0
6.5 V
VGS = 10, 9, 8, 7 V
0.8
0.8
6V
ID – Drain Current (A)
ID – Drain Current (A)
TJ = –55_C
5.5 V
0.6
5V
0.4
4.5 V
4V
0.2
3.5 V
3V
0
1
2
3
4
5
25_C
0.4
125_C
0.2
2.5 V
2, 1 V
0.0
0.6
0.0
6
0
1
VDS – Drain-to-Source Voltage (V)
2
4
5
6
25
30
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
7
60
VGS = 0 V
f = 1 MHz
TJ = 25_C
6
50
rDS @ 5 V = VGS
5
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
3
4
3
rDS @ 10 V = VGS
2
40
30
Ciss
20
Coss
10
1
0
0.0
Crss
0
0.2
0.4
0.6
0.8
0
1.0
5
ID – Drain Current (A)
Gate Charge
20
10
15
20
VDS – Drain-to-Source Voltage (V)
2.0
On-Resistance vs. Junction Temperature
VGS = 10 V, rDS @ 0.5 A
16
rDS(on) – On-Resistance ( Ω )
(Normalized)
VGS – Gate-to-Source Voltage (V)
VDS = 30 V
ID = 0.5 A
12
8
4
0
0
400
800
1200
1600
Qg – Total Gate Charge (pC)
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
2000
2400
1.5
1.0
VGS = 5 V, rDS @ 0.05 A
0.5
0.0
–55
–30
–5
20
45
70
95
120
145
TJ – Junction Temperature (_C)
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11-3
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
rDS(on) – On-Resistance ( Ω )
IS – Source Current (A)
1.000
TJ = 125_C
0.100
TJ = 25_C
0.010
5
ID = 50 mA
4
500 mA
3
2
1
0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
VSD – Source-to-Drain Voltage (V)
6
8
10
12
14
16
18
20
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.50
ID = 250 mA
VGS(th) – Variance (V)
0.25
–0.00
–0.25
–0.50
–0.75
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
0.01
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
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11-4
Document Number: 70212
S-04279—Rev. G, 16-Jul-01