EPIGAP EDC-660-19-01

7-Segment LED-Chip
EDC-660-19-01
Preliminary
6/22/2007
rev. 05/07
Radiation
Type
Technology
Electrodes
Red
Diffusion type
GaAsP/GaAs
P (anode) up
1000
30
typ. dimensions (µm)
425
typ. thickness
Application
330 µm
cathode
1130
Au-alloy metalization
anode
Al metalization
This miniature device is an
excellent choice for
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Ta = -40..120°C
TC(λC)
0.15
nm/K
Operating temperature range
Tamb
-30 to +100
°C
Storage temperature range
Tstg
-40 to +125
°C
Typ
Max
Unit
VF
1.7
1.9
V
IF = 20 mA
VF
1.8
2.1
V
IR = 100 µA
VR
5
IF = 5 mA
Iv
60
85
µcd
Luminous intensity/segment2
IF = 20 mA
Iv
280
400
µcd
Luminous intensity/segment3
IF = 20 mA
Iv
710
µcd
2
IF = 20 mA
1.75
IV ratio to adjacent chip
IF = 20 mA
2.00
Peak wavelength
IF = 20 mA
λp
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
Temperature coefficient of λC
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions1
IF = 5 mA
Forward voltage
Forward voltage
Reverse voltage
Luminous intensity/segment
IV ratio segment to segment
2
Symbol
Min
650
V
660
670
nm
17
nm
1
Current for one segment
Measured on bare chip on TO-18 header
3
Measured on epoxy covered chip on TO-18 header
2
Labeling
Type
Lot N°
IV(typ) [µcd]
VF(typ) [V]
Quantity
EDC-660-19-01
Packing: Chips in wafer pack or on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1